The effect of Ga content on In_2xGa_2−2xO₃nanowire transistor characteristics

Abstract

We have investigated the change in structural and electrical properties of In(2x)Ga(2-2x)O(3) nanowires (x = 1, 0.69 and 0.32) grown with varied indium (In) and gallium (Ga) contents. The as-grown In(2x)Ga(2-2x)O(3) nanowires kept the cubic crystal structure of In(2)O(3) intact even when the atomic percentages of Ga were increased to 31% (x = 0.69) and 68% (x = 0.32) in comparison to the total amount of In and Ga. However, as Ga added to In(2)O(3) structure was substituted with In, the lattice constant decreased and, consequently, the main peaks observed in x-ray diffraction in the direction of (222), (400) and (440) shifted by around ∼0.08°. The average threshold voltage values for the In(2x)Ga(2-2x)O(3) nanowire transistors were -9.9 V (x = 1), -6.6 V (x = 0.67) and -5.6 V (x = 0.32), exhibiting a more positive shift and the sub-threshold slope increased to 0.53 V /dec (x = 1), 0.33 V /dec (x = 0.67) and 0.27 V /dec (x = 0.32), showing an improved switching characteristic with increasing Ga.

The effect of dopant and optical micro-cavity on the photoluminescence of Mn-doped ZnSe nanobelts

“…Therefore, the present measurable shift of diffraction peak (about 0.05°) come from doped Mn because of the larger ionic radius of Mn 2+ (0.80 Å) than that of Zn 2+ (0.74 Å). Such shift of diffraction peak can also be observed in other doped nanostructures [17-19]. Therefore, manganese can diffuse and dope into ZnSe nanobelts efficiently when MnCl 2 or Mn(CH 3 COO) 2 were used as dopants.…”

Extremely Low Thermal Conductivity and Enhanced Thermoelectric Performance of Porous Gallium-Doped In2O3

“…Compared with the In 3d 5/2 peak position (443.6 eV) of metallic indium, there is a chemical shift, indicating that indium is in an oxide state in SPS-1000. Figure d exhibits detailed information of Ga 2p 1/2 and Ga 2p 3/2 with a gap of 26.9 eV, which corresponds to an interspace of 26.84 eV in In 2 x Ga 2–2 x O 3 nanowire . It demonstrates that SPS-1000 contains Ga elements.…”

“…Figure 6d exhibits detailed information of Ga 2p 1/2 and Ga 2p 3/2 with a gap of 26.9 eV, which corresponds to an interspace of 26.84 eV in In 2x Ga 2−2x O 3 nanowire. 42 It demonstrates that SPS-1000 contains Ga elements.…”

Highly Stable Operation of Metal Oxide Nanowire Transistors in Ambient Humidity, Water, Blood, and Oxygen

“…These devices often make use of various carbon-nanotube, nanowire, and graphene materials as highly conductive electrodes or semiconductors. For transistor and sensor applications, semiconducting metal oxide nanowires are particularly attractive because of their simple synthesis, metal–semiconductor transition, high transconductance, and large variation in conductivity as a function of environmental parameters. − Concerning such nanoscale transistors, the investigation is aimed at achieving high-field-effect mobility (μ eff ), high on-current ( I on ), high on–off current ratio ( I on / I off ), and steep subthreshold slope (SS), − and extensive studies have been performed to improve transistor characteristics by annealing, doping, and passivation of the active area of the oxide nanowire devices. Metal oxide semiconductors used in these devices are notoriously sensitive to surface effects; their transistor and emission characteristics change with the working conditions, e.g., temperature, light, gas, humidity, water, and blood.…”