2015
DOI: 10.1016/j.microrel.2014.10.005
|View full text |Cite
|
Sign up to set email alerts
|

The effect of electroplating parameters and substrate material on tin whisker formation

Abstract: a b s t r a c tElectroplated tin finishes are widely used in the electronics industry due to their excellent solderability, electrical conductivity and corrosion resistance. However, the spontaneous growth of tin whiskers during service can result in localised electrical shorting or other harmful effects. Until recently, the growth of tin whiskers was successfully mitigated by alloying the tin with lead. However, restriction in the use of lead in electronics as a result of EU legislation (RoHS) has led to rene… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

3
25
0
1

Year Published

2015
2015
2021
2021

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 49 publications
(30 citation statements)
references
References 37 publications
3
25
0
1
Order By: Relevance
“…While the current density affected surface morphology and the solution pH affected the crystal orientation of tin deposits, the current density and pH had no significant effect on the grain size. 55 Other investigations include the control of electroplating parameters to engender tin electrodeposit with a microstructure and grain orientation that were inherently resistant to whisker growth 56 . It is generally postulated that deposits with columnar grain structures are more susceptible to whisker growth than those with equiaxed grain structures 57 .…”
Section: Operating Parameters and Deposit Propertiesmentioning
confidence: 99%
“…While the current density affected surface morphology and the solution pH affected the crystal orientation of tin deposits, the current density and pH had no significant effect on the grain size. 55 Other investigations include the control of electroplating parameters to engender tin electrodeposit with a microstructure and grain orientation that were inherently resistant to whisker growth 56 . It is generally postulated that deposits with columnar grain structures are more susceptible to whisker growth than those with equiaxed grain structures 57 .…”
Section: Operating Parameters and Deposit Propertiesmentioning
confidence: 99%
“…An important observation is that there is a large difference in the whisker densities for the native oxides, ranging from ~1200 cm -2 to ~3700 cm -2 . There are a number of possible explanations for this difference: firstly whisker growth is, by nature, unpredictable and sample to sample variations in whisker density are not uncommon 22 . Secondly, there may be slight variations in the Cu content of the deposit, due to either Sn or Cu depletion since an inert counter electrode is being used and the electroplating bath is not being replenished with fresh metal ions.…”
Section: Sn-cu Electrodeposits On Cumentioning
confidence: 99%
“…Sn whiskers present a reliability risk for microelectronic devices because they can form short circuits between the terminals of the components. Sn whisker growth is induced by compressive stress on the Sn layer such as direct external mechanical load (by mechanically closing connectors or test needles), residual stress by the Sn layer deposition [3], volumetric expansion by oxide and intermetallic development [4,5], and thermomechanical effects [6]. The whisker development is a type of stress release mechanism for the tin layer against compressive stresses.…”
mentioning
confidence: 99%