The Effect of Electron Irradiation Dose on the Profile of Electric Characteristics of GaAs VPE Layers

Abstract

The electric properties of electron irradiated GaAs have been extensively studied by various authors [l, 21. In a recent study of the electron mobility profile of GaAs MESFETs it was reported that the contribution of the non-lattice scattering terms (ionized impurities and clusters) to the total free electron scattering probability increase after irradiation versus depth at distances d > 0.2 pm below the Schottky contact [3].