The effect of downstream plasma treatments on graphene surfaces

Peltekis, N.; Kumar, Sunil; McEvoy, Niall; Lee, Kangho; Weidlich, Anne; Duesberg, Georg S.

doi:10.1016/j.carbon.2011.08.052

Cited by 99 publications

(87 citation statements)

References 63 publications

(79 reference statements)

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“…Details on this are included in the ESI † which accompanies this paper. The plasma treatment process described here has previously been shown to be suitable for the plasma treatment and functionalisation of extremely fragile graphene films 31,32 and has successfully been used in the reduction and N-doping of graphene oxide powder. 33 X-ray Photoelectron Spectroscopy (XPS) was carried out using a monochromated Al Ka source in conjunction with an Omicron EA 125 hemispherical analyser.…”

Section: Methodsmentioning

confidence: 99%

Nitrogen-doped pyrolytic carbon films as highly electrochemically active electrodes

Nolan

McEvoy

Keeley

et al. 2013

Phys. Chem. Chem. Phys.

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abNitrogen-doped Pyrolytic Carbon (N-PyC) films were employed as an electrode material in electrochemical applications. PyC was grown by via non-catalysed chemical vapour deposition and subsequently functionalised via exposure to ammonia-hydrogen plasma. The electrochemical properties of the N-PyC films were investigated using the ferri/ferro-cyanide and hexaamine ruthenium(III) chloride redox probes.Exceptional electron transfer properties were observed and quantified for the N-PyC compared to the as-grown films. X-ray photoelectron spectroscopy confirmed the presence of nitrogen in edge plane graphitic configurations and the surface of the N-PyC was investigated using scanning electron microscopy and atomic force microscopy. The excellent electrochemical performance of the N-PyC, in addition to its ease of preparation, renders this material ideal for applications in electrochemical sensing.

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Section: Methodsmentioning

confidence: 99%

Nitrogen-doped pyrolytic carbon films as highly electrochemically active electrodes

Nolan

McEvoy

Keeley

et al. 2013

Phys. Chem. Chem. Phys.

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“…Plasma treatment can also be used as post process cleaning step for CVD grown graphene. 104 Cleaned graphene showed enhanced conductivity and charge career mobility as shown in Figure 13.…”

Section: Nitrogen Functionalizationmentioning

confidence: 98%

Plasma engineering of graphene

Dey

Chroneos

Braithwaite

et al. 2016

Applied Physics Reviews

130

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Recently, there have been enormous efforts to tailor the properties of graphene.These improved properties extend the prospect of graphene for a broad range of applications. Plasmas find applications in various fields including materials science and have been emerging in the field of nanotechnology. This review focuses on different plasma functionalization processes of graphene and its oxide counterpart. The review aims at the advantages of plasma functionalization over the conventional doping techniques. Selectivity and controllability of the plasma techniques opens up future pathways for large scale, rapid functionalization of graphene for advanced applications. We also emphasize on atmospheric pressure plasma jet as the future prospect of plasma based functionalization processes.

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“…Furthermore, since single-layer graphene is oneatom thick, any residues from fabrication can significantly influence charge transport and electronic device performance. [11][12][13][14][15][16] Although several studies have reported dry etching procedures for graphene-based devices, [17][18][19][20][21][22][23][24][25] this previous work primarily employed optical microscopy and Raman spectroscopy to determine optimal etching conditions. While these methods provide valuable information, they lack sufficient resolution and/or sensitivity to definitively detect residual graphene and/or etching byproducts at the nanoscale.…”

Section: Manuscriptmentioning

confidence: 99%

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

Prado

Jariwala²,

Marks

et al. 2013

Applied Physics Letters

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Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O 2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing that incomplete etching may have deleterious effects on devices and/or downstream processing, AFM characterization is used here to determine optimal etching conditions that eliminate graphene dry etching residues.

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The effect of downstream plasma treatments on graphene surfaces

Cited by 99 publications

References 63 publications

Nitrogen-doped pyrolytic carbon films as highly electrochemically active electrodes

Nitrogen-doped pyrolytic carbon films as highly electrochemically active electrodes

Plasma engineering of graphene

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

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