Plasma engineering of graphene

Dey, Avishek; Chroneos, Alexander; Braithwaite, Nicholas; Gandhiraman, Ram P.; Krishnamurthy, S.

doi:10.1063/1.4947188

Cited by 127 publications

(88 citation statements)

References 144 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast, graphene oxide (GO) can form as table dispersion in number of solvents, which makes it attractive for fast atmospheric-pressure deposition methods, such as screen, [11] inkjet, [12] and gravure printing. [15] The electrical properties of GO may vary according to the number of sites with sp 2 carbon (p states) ands p 3 carbon (s states). [15] The electrical properties of GO may vary according to the number of sites with sp 2 carbon (p states) ands p 3 carbon (s states).…”

Section: Introductionmentioning

confidence: 99%

“…[24,25] Jiang et al used annealing in H 2 /Ar at 300 8Cf or 2h [26] and Tian et al used H 2 plasma at 425 8C. [15,30] For example, Zeng et al employedo xidative plasma treatmento fg raphene to increasei nterfacial adhesion between graphene and SiO 2 surfaces [31] and Yang et al used an N 2 plasma jet for plasma finishing of rGO flakes in a flexible supercapacitort oi ncreaseh ydrophilicity and thus improve the penetration of electrolyte into the nanopores. [29] Several contributions have recently reported the application of electrical plasma to treat graphene and GO surfaces to tune their electrical ando pticalp roperties by controlling surface functional groups.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Atmospheric Dry Hydrogen Plasma Reduction of Inkjet‐Printed Flexible Graphene Oxide Electrodes

et al. 2018

View full text Add to dashboard Cite

This study concerns a low-temperature method for dry hydrogen plasma reduction of inkjet-printed flexible graphene oxide (GO) electrodes, an approach compatible with processes envisaged for the manufacture of flexible electronics. The processing of GO to reduced graphene oxide (rGO) was performed in 1-64 s, and sp /sp +sp carbon concentration increased from approximately 20 % to 90 %. Since the plasma reduction was associated with an etching effect, the optimal reduction time occurred between 8 and 16 s. The surface showed good mechanical stability when deposited on polyethylene terephthalate flexible foils and significantly lower sheet resistance after plasma reduction. This method for dry plasma reduction could be important for large-area hydrogenation and reduction of GO flexible surfaces, with present and potential applications in a wide variety of emerging technologies.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atmospheric Dry Hydrogen Plasma Reduction of Inkjet‐Printed Flexible Graphene Oxide Electrodes

et al. 2018

View full text Add to dashboard Cite

show abstract

“…On the other hand, topdown processing such as post-plasma treatment (post-synthesis processing) is often advantageous to arbitrary and/or precise control of graphene shapes and structures, where previously prepared graphene undergoes plasma processing. In this subsection doping, surface modification, and etching methods as top-down plasma processing are dealt with, by which desirable properties are expected to be endowed to pristine graphene (Dey et al 2016).…”

Section: Functionalization Of Graphene By Plasma Engineeringmentioning

confidence: 99%

Nanocarbon materials fabricated using plasmas

Hatakeyama

2017

Rev. Mod. Plasma Phys.

View full text Add to dashboard Cite

Since the discovery of fullerenes more than three decades ago, new kinds of nanoscale materials of carbon allotropes called ''nanocarbons'' have so far been discovered or synthesized at successive intervals as cases such as carbon nanotubes, carbon nanohorns, graphene, carbon nanowalls, and a carbon nanobelt, while nanodiamonds were actually discovered before then. Their attractively excellent mechanical, physical, and chemical properties have driven researchers to continuously create one of the hottest frontiers in materials science and technology. While plasma states have often been involved in their discovery, on the other hand, plasma-based approaches to this exciting field originally hold promising and enormous potentials for advancing and expanding industrial/biomedical applications of nanocarbons of great diversity. This article provides an extensive overview on plasma-fabricated nanocarbon materials, where the term ''fabrication'' is defined as synthesis, functionalization, and assembly of devices to cover a wide range of issues associated with the step-by-step plasma processes. Specific attention has been paid to the comparative examination between plasma-based and non-plasma methods for fabricating the nanocarobons with an emphasis on the advantages of plasma processing, such as low-temperature/large-scale fabrication and diversitycarrying structure controllability. The review ends with current challenges and prospects including a ripple effect of the nanocarbon studies on the development of related novel nanomaterials such as transition metal dichalcogenides. It contains not only the latest progress in the field for cutting-edge scientists and engineers, but also the introductory guidance to non-specialists such as lower-class graduate students.& Rikizo Hatakeyama

show abstract

“…Real strides have been made towards making graphene industrially relevant in areas such as electrocatalysis, biological sensors, fuel cells and field emission sources. [1,2] These applications require graphene to be modified and tailored to perform optimally. One of the fundamental ways to modify semiconductors is doping.…”

Section: Introductionmentioning

confidence: 99%

Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments

McManus

Hennessy

Cullen

et al. 2017

Physica Status Solidi (b)

View full text Add to dashboard Cite

This report details the controllable doping of graphene through post‐growth plasma treatments. Defects are controllably introduced into the lattice using argon plasma, following this sample are exposed to ammonia/hydrogen plasma. During this nitrogen atoms get incorporated causing partial restoration of the graphene lattice. The damage levels are characterised by Raman and X‐ray photoelectron spectroscopies. The incorporation of nitrogen into the graphene lattice provides significant n‐doping. This is confirmed by the fabrication of graphene field‐effect transistors which show clear n‐type behaviour and mobilities not significantly less than those of pristine graphene. Thus this work demonstrates the viability of plasma treatments to reliably dope graphene.

show abstract

Plasma engineering of graphene

Cited by 127 publications

References 144 publications

Atmospheric Dry Hydrogen Plasma Reduction of Inkjet‐Printed Flexible Graphene Oxide Electrodes

Atmospheric Dry Hydrogen Plasma Reduction of Inkjet‐Printed Flexible Graphene Oxide Electrodes

Nanocarbon materials fabricated using plasmas

Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments

Contact Info

Product

Resources

About