The Effect of Doping on the Lattice Parameter and Properties of Cubic Boron Nitride

Mukhanov, V. A.; Courac, Alexandre; Solozhenko, Vladimir L.

doi:10.3103/s1063457620060088

Cited by 5 publications

(3 citation statements)

References 28 publications

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“…Due to the ultrawide bandgap of cBN, the low resistivity of CLCC-cBN crystals is caused by unintentional doping during growth, which may be related to the catalyst. Mukhanov et al have found that doping with magnesium cannot form the conductive cBN crystals, whose results are consistent with ours. In addition, Li is reported as a good candidate p-type dopant for cBN with a relatively low formation energy, based on a first-principle calculation .…”

Section: Resultssupporting

confidence: 92%

Electron–Phonon Fano Effect in Cubic Boron Nitride

Zhu,

Hu,

Lin

et al. 2023

ACS Photonics

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The phonon properties of cubic boron nitride (cBN) with ultrahigh thermal conductivity have always been of great concern. Generally, due to the anharmonic effect, phonons undergo monotonic decay with increasing temperature. However, anomalous nonmonotonic phonon decay of longitudinal optical phonons (LO) is observed in cBN single crystals with low resistivity grown through the high-temperature and high-pressure catalytic method. Specifically, the temperature evolution of the Raman phonon properties of cBN single crystals in the range 100− 520 K has been studied. As temperature increases, the linewidth of LO first decreases and then increases, and the Raman intensity first increases and then decreases with a transition temperature. The nonmonotonic phonon decay is caused by both the electron− phonon Fano effect and the phonon−phonon anharmonic effect. At low temperatures, phonons are bound by electrons, and phonon decay is mainly dominated by the Fano effect. As the temperature increases, the Fano effect weakens, while the anharmonic effect gradually strengthens, leading to the appearance of a transition temperature. The results reveal the electron−phonon interaction in cBN, which will deepen the understanding of the phonon behavior in cBN.

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Section: Resultssupporting

confidence: 92%

Electron–Phonon Fano Effect in Cubic Boron Nitride

Zhu,

Hu,

Lin

et al. 2023

ACS Photonics

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“…Even stronger changes in the local coordination were obtained when doping the wire substitutionally with heteroatoms. In particular, the introduction of a dopant with an ionic radius different from that of the host atoms locally leads to strong lattice expansion or contraction [67].…”

Section: Structural Propertiesmentioning

confidence: 99%

Density Functional Investigation of [001] and [111] SiNWs and the Effect of Doping with Boron and Phosphorus

Al-Nuaimi,

Hilser,

Gemming

2024

Crystals

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In the present study, we investigate the influence of boron (B) and phosphorus (P) (p- and n-type, respectively) doping on the electronic properties of ultra-thin silicon nanowires (SiNWs) by gradient-corrected density functional calculations with the Perdew–Burke–Ernzerhof (PBE) approximation. In the limit of very small diameters (5–8 Å), both pristine and highly active unsaturated SiNWs with orientations along the [001] and [111] directions exhibit electronic states around the Fermi level, indicative of conductive properties. Conduction is further enhanced by the introduction of doping atoms, as demonstrated by the relative change in the band structures of SiNWs with and without B and P doping. This investigation provides an important insight into the electronic states of SiNWs, which are candidates for future electronics or sensing applications.

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“…This intermediate phase X cannot be recovered at ambient conditions, and this study revealed the impossibility to suggest the correct mechanism of HP-HT crystallization of c-BN without in situ methods. Therefore, studied supercritical synthesis is very efficient for high doping degree of c-BN, e.g., by Si or Be, and recently high-temperature semiconductors (operating up to 875 K) were reported [ 66 ].…”

Section: In Situ Large-volume High-pressure Synthesesmentioning

confidence: 99%

In Situ High-Pressure Synthesis of New Outstanding Light-Element Materials under Industrial P-T Range

Godec

Courac

2021

Materials

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High-pressure synthesis (which refers to pressure synthesis in the range of 1 to several GPa) adds a promising additional dimension for exploration of compounds that are inaccessible to traditional chemical methods and can lead to new industrially outstanding materials. It is nowadays a vast exciting field of industrial and academic research opening up new frontiers. In this context, an emerging and important methodology for the rapid exploration of composition-pressure-temperature-time space is the in situ method by synchrotron X-ray diffraction. This review introduces the latest advances of high-pressure devices that are adapted to X-ray diffraction in synchrotrons. It focuses particularly on the “large volume” presses (able to compress the volume above several mm3 to pressure higher than several GPa) designed for in situ exploration and that are suitable for discovering and scaling the stable or metastable compounds under “traditional” industrial pressure range (3–8 GPa). We illustrated the power of such methodology by (i) two classical examples of “reference” superhard high-pressure materials, diamond and cubic boron nitride c-BN; and (ii) recent successful in situ high-pressure syntheses of light-element compounds that allowed expanding the domain of possible application high-pressure materials toward solar optoelectronic and infra-red photonics. Finally, in the last section, we summarize some perspectives regarding the current challenges and future directions in which the field of in situ high-pressure synthesis in industrial pressure scale may have great breakthroughs in the next years.

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The Effect of Doping on the Lattice Parameter and Properties of Cubic Boron Nitride

Cited by 5 publications

References 28 publications

Electron–Phonon Fano Effect in Cubic Boron Nitride

Electron–Phonon Fano Effect in Cubic Boron Nitride

Density Functional Investigation of [001] and [111] SiNWs and the Effect of Doping with Boron and Phosphorus

In Situ High-Pressure Synthesis of New Outstanding Light-Element Materials under Industrial P-T Range

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