The effect of doping on low temperature growth of high quality GaAs nanowires on polycrystalline films

Abstract

The increasing demand for miniature autonomous sensors requires low cost integration methods, but to date, material limitations have prevented the direct growth of optically active III-V materials on CMOS devices. We report on the deposition of GaAs nanowires on polycrystalline conductive films to allow for direct integration of optoelectronic devices on dissimilar materials. Undoped, Sidoped, and Be-doped nanowires were grown at T s =400°C on oxide (indium tin oxide) and metallic (platinum and titanium) films. Be-doping is shown to significantly reduce the nanowire diameter and improve the nanowire aspect ratio to 50:1. Photoluminescence measurements of Be-doped nanowires are 1-2 orders of magnitude stronger than undoped and Si-doped nanowires and have a thermal activation energy of 14meV, which is comparable to nanowires grown on crystalline substrates. Electrical measurements confirm that the metal-semiconductor junction is Ohmic. These results demonstrate the feasibility of integrating nanowire-based optoelectronic devices directly on CMOS chips.

Novel Nanofluidic Cells Based on Nanowires and Nanotubes for Advanced Chemical and Bio-Sensing Applications

“…The flux dependence of radial vs. growth was theoretically studied and the diffusion on the NW sidewalls was combined into the model to understand the tapering phenomenon. Dejarld et al also studied the doping effect on the diameter of GaAs NW [ 27 ]. Be-doping was found to significantly reduce the diameter and increase the aspect ratio to 50:1, which greatly improves the performance of the optoelectronic devices.…”

Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

“…Using this approach, different materials systems were investigated, such as Ge and Si NWs on Ag, Al, Au, Cr, Cu and Ni, [13] ZnO NWs on Au-coated glass, [14] Si and Al 2 O 3 , [15] and GaAs NWs on Pt and Ti. [16] Group-III nitride NWs were reported on sputter-deposited films of both Ti and Mo [1,3,4,[7][8][9][10], and NW-based light-emitting diodes (LEDs) were also demonstrated on these substrates. [3,4,[7][8][9] While sputtered metal films offer significant advantages over conventional substrates for crystal growth, metal foils represent a more versatile kind of substrate.…”

“…So far, most efforts in this field were devoted to the integration of semiconducting NW ensembles on metallic films sputter-deposited on various substrates. Using this approach, different materials systems were investigated, such as Ge and Si NWs on Ag, Al, Au, Cr, Cu and Ni [17], ZnO NWs on Au-coated glass [18], Si and Al 2 O 3 [19], and GaAs NWs on Pt and Ti [20]. Group-III nitride NWs were reported on sputter-deposited films of both Ti and Mo [1,3,4,[7][8][9][10], and NW-based light-emitting diodes (LEDs) were also demonstrated on these substrates [3,4,[7][8][9].…”

Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal–Organic Chemical Vapor Deposition

“…In many applications, however, the electrical properties of the nanowires need to be controlled by means of doping . So far, less effort has been devoted to the epitaxial growth of doped III–V semiconductor nanowires. − Although examples such as p-type doping in GaAs nanowires using C/Zn , /Be, n-type doping in GaAs nanowires using Si/Te/Sn , dopants have been reported, the growth behaviors of doped nanowires are not fully understood as these impurities may cause undesirable effects. For instance, using dimethyl-zinc as the Zn dopant precursor, axial growth of InP nanowires can be significantly enhanced while the axial growth of InAs nanowires is impeded with the Si addition .…”