2013
DOI: 10.1016/j.cap.2012.11.011
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The effect of differently sized Ag catalysts on the fabrication of a silicon nanowire array using Ag-assisted electroless etching

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Cited by 25 publications
(17 citation statements)
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“…The Ag film with a thickness of 5 nm formed the porous structures, while SiNWs with 20-nm Ag films were fabricated [10]. Recently, Chiou et al [16] have investigated the use of an optimum thickness layer of an Ag catalyst in the fabrication of a silicon nanowire array through the two-step Ag-assisted chemical etching method. To the best of our knowledge, few studies have considered the thickness, type, and morphology of the noble metal involved in the fabricating process of SiNWs.…”
Section: Introductionmentioning
confidence: 99%
“…The Ag film with a thickness of 5 nm formed the porous structures, while SiNWs with 20-nm Ag films were fabricated [10]. Recently, Chiou et al [16] have investigated the use of an optimum thickness layer of an Ag catalyst in the fabrication of a silicon nanowire array through the two-step Ag-assisted chemical etching method. To the best of our knowledge, few studies have considered the thickness, type, and morphology of the noble metal involved in the fabricating process of SiNWs.…”
Section: Introductionmentioning
confidence: 99%
“…3f and g, respectively. First, the bonding electrons of surface silicon atoms can be transferred to Ag + ions in aqueous HF solution; that is, in the Ag + / Ag redox system with energy levels strongly overlapping with the valence bond of silicon, hole injection becomes more likely. The anodic oxidation of silicon dissolution should occur in the close vicinity of Ag nuclei to realise direct electron transport [14][15][16][17][18]. The surrounding lattices are oxidised and subsequently etched by HF [16][17][18].…”
Section: Resultsmentioning
confidence: 99%
“…The growth mechanisms of silicon nanowires and nanosheets can be established by observation in the period of EE reaction [14, 15]. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Several series of experiments have been carried out based on HF solutions with Ag + , Cu 2+ , AuCl 4 − or PtCl 6 2− and multicrystalline silicon. The metal ions were chosen because they are commonly used in the metal-assisted etching of silicon [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 26 , 27 , 29 , 30 , 31 , 32 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 63 , 67 , 68 , 69 , 70 , 71 , 72 , 73 , …”
Section: Introductionmentioning
confidence: 99%