“…However, for this it is necessary to shift the optical sensitivity of semiconductor oxides from the UV range to longer wavelengths. This can be achieved by creating the defects in the semiconductor matrix (Han et al, 2012(Han et al, , 2013Varechkina et al, 2012;Geng et al, 2013;Zhang et al, 2017) or using the sensitizers that absorb light in the visible range (Peng et al, 2011;Vasiliev et al, 2013;Chizhov et al, 2014Chizhov et al, , 2016Chizhov et al, , 2018Yang et al, 2014;Zhang et al, 2015;Geng et al, 2016a,b;Paolesse et al, 2017;Rumyantseva et al, 2018). In the latter case, the consistency between the energy levels of metal oxide and sensitizer, is the necessary condition ensuring the transfer possibility of photoexcited charge carriers from the sensitizer to the semiconductor matrix (Minami et al, 1998;Ivanov et al, 2007;Kim et al, 2009;Vasiliev et al, 2011;Mordvinova et al, 2014).…”