The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

Bolotnikov, A. E.; Chen, C.M. Hubert; Cook, W. R.; Harrison, Fiona A.; Kuvvetli, I.; Schindler, S. M.; Stahle, C. M.; Parker, Bradford H.

doi:10.1016/s0168-9002(03)01730-3

Cited by 15 publications

(4 citation statements)

References 15 publications

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“…The strength of the electric field in the detector is the manifestation for a certain level of the drift velocity. And there is not much dependence with the applied bias (Bolotnikova et al, 2003). But improving the bias means the introduction of more surface leakage current.…”

Section: Methodsmentioning

confidence: 99%

Performance Test and Evaluation for Pixel CdZnTe Detector of Different Thickness

Shen¹,

Xiao²,

Zhang³

et al. 2014

RJASET

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The aim of this study is to get the photon energy suitable for different thickness detector, different photon energy acts on pixel CdZnTe detector of different thickness. We can obtain the energy spectrum estimation, energy resolution and peak efficiency by the experiment and simulation with the radiation source of 241Am and 137Cs acting on pixel CdZnTe detector. From experiment results, it can be found that at the high energy of 662 keV the thicker the CdZnTe detector is, the higher the energy resolution and peak efficiency is while at the low energy of 59.5 keV tailing increases and charge is loss. It also can be found the characteristic of detector is better at the low energy when the detector thickness is thinner.

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Section: Methodsmentioning

confidence: 99%

Performance Test and Evaluation for Pixel CdZnTe Detector of Different Thickness

Shen¹,

Xiao²,

Zhang³

et al. 2014

RJASET

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show abstract

“…Charge transport depends basically on two factors: (i) charge drift in the electric field applied in the detector, and (ii) A lower resistive (10 9 g·cm) layer with a thickness of 20 urn was supposed to be present just under the pixel contact, as predicted to be in [9,10]. Results in Fig.…”

Section: Effects Ofcharge Transportmentioning

confidence: 99%

Recent developments on high spatial resolution CdZnTe pixel detectors

Pérez

2008

2008 IEEE Nuclear Science Symposium Conference Record

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“…According to the results in Refs. [28,29], at low differential biases, <10 V, the surface between the contacts behaves like a field-effect transistor. At intermediate biases, when the surface channel is fully depleted, the current becomes diffusion limited (CZT is a slow semiconductor).…”

Section: Charge Sharingmentioning

confidence: 99%

Non‐uniformity effects in CdZnTe coplanar‐grid detectors

Carini

Bolotnikov

Camarda

et al. 2007

Physica Status Solidi (b)

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We discuss the findings from our studies of the performance of commercial coplanar-grid CdZnTe detectors. The devices were investigated using a highly collimated X-ray beam available at Brookhaven's National Synchrotron Light Source, and by applying pulse-shape analysis to measure correlations between the signals read out from the devices. Although the operational principle of coplanar-grid (CPG) detectors is well known, we found some important new details that help to better clarify the performance limitations of this type of device. The correlation plots we present can also be used as diagnostic tools to characterize the behavior of the CPG devices and to help to improve the designs of electrodes. This work illustrates the typical limitations related to the geometry of the contacts in CPG devices and how material nonuniformities can amplify these problems.

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The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

Cited by 15 publications

References 15 publications

Performance Test and Evaluation for Pixel CdZnTe Detector of Different Thickness

Performance Test and Evaluation for Pixel CdZnTe Detector of Different Thickness

Recent developments on high spatial resolution CdZnTe pixel detectors

Non‐uniformity effects in CdZnTe coplanar‐grid detectors

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