The effect of calcium zirconate modifications on the microstructure and functional properties of sodium niobate thin films prepared by chemical solution deposition

Vrabelj, Tanja; Matavž, Aleksander; Bobnar, V.; Malič, Barbara

doi:10.1016/j.jeurceramsoc.2019.02.014

Cited by 10 publications

(2 citation statements)

References 35 publications

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“…[ 53 ] Moreover, the NaNbO 3 piezoceramic exhibited a low d 33 value in the range of approximately 25–30 pm V −1 . [ 53 ] Therefore, the [001]‐oriented NaNbO 3 film deposited at 300 °C displayed a high d 33 value. In addition, the NaNbO 3 film exhibits excellent ferroelectric and insulating properties (Figure S8a–e, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

“…The d 33 value of the NaNbO 3 thin film, formed at room temperature via chemical deposition and subsequently annealed at 650 °C, was reported to be approximately 35 pm V −1 . [ 53 ] Moreover, the NaNbO 3 piezoceramic exhibited a low d 33 value in the range of approximately 25–30 pm V −1 . [ 53 ] Therefore, the [001]‐oriented NaNbO 3 film deposited at 300 °C displayed a high d 33 value.…”

Section: Resultsmentioning

confidence: 99%

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Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures

Kim,

Chae

et al. 2023

Advanced Intelligent Systems

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[001]‐oriented NaNbO3 films are deposited on Sr2Nb3O10/TiN/SiO2/Si substrates at 300 °C. The Sr2Nb3O10 nanosheets are used as a template to form crystalline NaNbO3 films at low temperature. The NaNbO3 films deposited on one Sr2Nb3O10 monolayer exhibit a bipolar switching curve due to the construction and destruction of oxygen vacancy filaments. Because the Sr2Nb3O10 monolayer does not act as an insulating layer, the film does not exhibit self‐rectifying properties. Self‐rectifying properties are observed in the NaNbO3 memristor, which forms on two Sr2Nb3O10 monolayers that act as tunnel barriers in the memristor. The memristor exhibits extensive rectification and on/off ratios of 48 and 15.7, respectively. Tunneling is the current conduction mechanism of the device in the low‐resistance state, and Schottky emission and tunneling are responsible for the conduction mechanism in the high‐resistance state at low and high voltages, respectively. The piezoelectric nanogenerator produced using the [001]‐oriented NaNbO3 film generates high voltage (1.8 V) and power (3.2 μW). Furthermore, endurance of the resistive random‐access memory and nonlinear transmission characteristics of the biological synapse are accomplished in the NaNbO3 memristor powered by the NaNbO3 nanogenerator. Therefore, the [001]‐oriented crystalline NaNbO3 film formed at 300 °C may be utilized for self‐rectifying and self‐powered artificial synapses.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures

Kim,

Chae

et al. 2023

Advanced Intelligent Systems

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Physical properties of crystalline NaNbO3 thin film grown on Sr2Nb3O10 nanosheets at low temperatures for piezoelectric energy harvesters

Woo

Kim

et al. 2022

Applied Surface Science

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Tunable dielectric and energy storage properties in nonstoichiometric NaNbO3 thin films

Dong

Luo

Kusaka

2022

Ceramics International

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The effect of calcium zirconate modifications on the microstructure and functional properties of sodium niobate thin films prepared by chemical solution deposition

Cited by 10 publications

References 35 publications

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures

Physical properties of crystalline NaNbO3 thin film grown on Sr2Nb3O10 nanosheets at low temperatures for piezoelectric energy harvesters

Tunable dielectric and energy storage properties in nonstoichiometric NaNbO3 thin films

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The effect of calcium zirconate modifications on the microstructure and functional properties of sodium niobate thin films prepared by chemical solution deposition

Cited by 10 publications

References 35 publications

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO3 Film Deposited on Sr2Nb3O10 Nanosheet at Low Temperatures

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO3 Film Deposited on Sr2Nb3O10 Nanosheet at Low Temperatures

Physical properties of crystalline NaNbO3 thin film grown on Sr2Nb3O10 nanosheets at low temperatures for piezoelectric energy harvesters

Tunable dielectric and energy storage properties in nonstoichiometric NaNbO3 thin films

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Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures