The effect of biaxial strain on impurity diffusion in Si and SiGe

Larsen, A. Nylandsted; Zangenberg, N.; Fage-Pedersen, Jacob

doi:10.1016/j.mseb.2005.08.078

Cited by 17 publications

(6 citation statements)

References 23 publications

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“…This concept can also be used to select the doping site of an impurity, e.g., applying a compressive strain will favor a substitutional site over an interstitial site. Also, strain can have an effect on dopant diffusion [10,11] to further influence the doping concentration, which will be an interesting subject for future study.…”

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confidence: 99%

Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State

et al. 2010

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When a semiconductor host is doped by a foreign element, it is inevitable that a volume change will occur in the doped system. This volume change depends on both the size and charge state difference between the dopant and the host element. Unlike the "common expectation" that if the host is deformed to the same size as the dopant, then the formation energy of the dopant would reach a minimum, our first-principles calculations discovered that when an external hydrostatic strain is applied, the change of the impurity formation energy is monotonic: it decreases if the external hydrostatic strain is applied in the same direction as the volume change. This effect also exists when a biaxial strain is applied. A simple strain model is proposed to explain this unusual behavior, and we suggest that strain could be used to significantly improve the doping solubility in semiconductor systems.

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confidence: 99%

Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State

et al. 2010

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“…the diffusion of antimony and tin in Si. The diffusion of these elements is mainly mediated by vacancies [22][23][24][25][26][27]. However, in contrast to previous studies, the diffusion of these elements should be investigated for temperatures between 700°C and 1400°C to identify possible deviations in the diffusion data from a single Arrhenius-type temperature dependence.…”

Section: Resultsmentioning

confidence: 99%

Properties of Point Defects in Silicon: New Results after a Long-Time Debate

Bracht

Kube

Hüger

et al. 2013

SSP

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The contributions of vacancies and self-interstitials to silicon (Si) self-diffusion are a matter of debate since many years. These native defects are involved in dopant diffusion and the formation of defect clusters and thus influence many processes that take place during Si single crystal growth and the fabrication of silicon based electronic devices. Considering their relevance it is remarkable that present data about the properties of native point defects in Si are still limited and controversy. This work reports recent results on the properties of native point defects in silicon deduced from self-diffusion experiments below 850°C. The temperature dependence of silicon self-diffusion is accurately described by contributions due to vacancies and self-interstitials assuming temperature dependent vacancy properties. The concept of vacancies whose thermodynamic properties change with temperature solves the inconsistency between self-and dopant diffusion in Si but further experiments are required to verify this concept and to prove its relevance for other material systems.

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“…It is known that Sn diffusion happens via vacancy-assisted diffusion 45 and that compressive strain enhances vacancy-assisted diffusion of dopants. 46 From this, an enhanced Sn diffusion and, therefore, enhanced formation of Sn cluster donors can be assumed in alloys with higher Sn content. Indeed, the test sample containing 5:0% Sn showed high donor concentration already at lower annealing temperatures.…”

Section: Tin As a Donor: The Relevance To The Field Of Group IV Almentioning

confidence: 88%

Tin-based donors in SiSn alloys

Scheffler

Roesgaard

Hansen

et al. 2019

Journal of Applied Physics

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Tin-containing Group IV alloys show great promise for a number of next-generation CMOS-compatible devices. Not least of those are optoelectronic devices such as lasers and light-emitting diodes. To obtain reliable operation, a high control over the doping in such materials is needed at all stages of device processing. In this paper, we report tin-based donors in silicon, which appear after heat treatment of a silicon-tin alloy at temperatures between 650 C and 900 C. Two stages of the donor are observed, called SD I and SD II, which are formed subsequently. A broad long-lifetime infrared photoluminescence is also observed during the first stages of donor formation. We discuss evolving tin clusters as the origin of both the observed donors and the photoluminescence, in analogy to the oxygen-based thermal donors in silicon and germanium.

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The effect of biaxial strain on impurity diffusion in Si and SiGe

Cited by 17 publications

References 23 publications

Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State

Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State

Properties of Point Defects in Silicon: New Results after a Long-Time Debate

Tin-based donors in SiSn alloys

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