The effect of atmospheric moisture on crack propagation in the interface between directly bonded silicon wafers

Masteika, V.; Kowal, Jan; Braitwaite, N. St. J.; Rogers, Tony

doi:10.1007/s00542-012-1685-8

Cited by 11 publications

(11 citation statements)

References 15 publications

(19 reference statements)

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“…[3][4][5][6][7][8][9] In order to obtain the real bonding energy value, the measurement has to be done in anhydrous atmosphere. 8 Indeed as soon as siloxane bonds significantly appear at the bonding interface, during the blade insertion in humid atmosphere, the water corrodes them and the debonding length increases, reducing the apparent bonding energy.…”

Section: Direct Bonding Siloxane Bondsmentioning

confidence: 99%

“…Masteika et al even succeeded in using all the WSC equations to recalculate the real direct bonding energy from the crack relaxation curves without having to use anhydrous atmosphere. 9 During direct bonding energy measurement using the DCB technique, the debonding length evolution and, maybe more significantly, its dependence on atmosphere humidity are then an indicator of siloxane bond presence at the bonding interface. This measurement allows us then to follow the classical silicon direct bonding reaction 1.…”

Section: Direct Bonding Siloxane Bondsmentioning

confidence: 99%

“…The direct bonding energy measurement or the strain energy release rate, G, using the double cantilever (DCB) beam technique is for instance highly affected by the water stress corrosion. [3][4][5][6][7][8][9] In addition to the direct bonding energy measurement, this DCB technique is also very interesting to improve the direct bonding mechanism understanding. Indeed, as the water stress corrosion only appears with siloxane bonds, it could be an interesting characterization of the classical silicon direct bonding reaction 1:…”

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confidence: 99%

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Water Stress Corrosion in Bonded Structures

Fournel

Martin-Cocher

Radisson

et al. 2015

ECS J. Solid State Sci. Technol.

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Direct bonding is now a well-known technique to join two flat surfaces without any additional material. This technique is used in many applications and especially in SOI (Silicon-On-Insulator) elaboration or in some backside imager manufacturing processes which are now almost in mass production. Direct bonding mechanism study is then very important in order to clearly understand this bonding behavior. Especially in the case of silicon or silicon dioxide hydrophilic surface, the role of water is essential. Water could lead to lots of different reactions at the bonding interface and especially the water stress corrosion could play an important role in the direct bonding mechanism.

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Section: Direct Bonding Siloxane Bondsmentioning

confidence: 99%

Section: Direct Bonding Siloxane Bondsmentioning

confidence: 99%

mentioning

confidence: 99%

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Water Stress Corrosion in Bonded Structures

Fournel

Martin-Cocher

Radisson

et al. 2015

ECS J. Solid State Sci. Technol.

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“…al. 56 Both of these papers study the effect of ambient humidity on DCB testing. F. Fournel et al demonstrate the use of an anhydrous nitrogen atmosphere DCB testing apparatus that is able to produce highly repeatable results.…”

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confidence: 99%

A Review of Hydrophilic Silicon Wafer Bonding

Masteika

Kowal

Braithwaite

et al. 2014

ECS J. Solid State Sci. Technol.

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Hydrophilically activated direct wafer bonding is a technique for gluelessly attaching oxide-coated wafers together. This ability is a vital step in the construction of many microelectronic and microelectromechanical (MEMS) devices. In particular this technique is widely used in the production of 3d interconnected devices due to the lack of interlayer. © 2014 The Electrochemical Society. [DOI: 10.1149/2.007403jss] All rights reserved.Manuscript submitted June 5, 2013; revised manuscript received December 9, 2013. Published February 3, 2014 This review covers the key papers relating to the theory, techniques and quantification of hydrophilically activated silicon wafer bonding. This begins with a review of the history and development of the art. Bond strength characterization is then reviewed followed first by models of physical deformation and then by plasma and radical activation techniques.In the interests of clarity and succinctness this review is not an attempt to exhaustively catalog all direct bonding wafer literature. Excluded are hydrophobic and UHV bonding, and the many papers applying bonding techniques to differing combinations of wafer materials. This paper concludes with a summery of the state of the art of direct wafer bonding and a summation of the current wafer-bonding model derived from the papers reviewed. History and Establishment of the Art

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“…However we initially found significant variation in bond strengths for identically processed bonded wafer pairs. Utilizing an optimized Maszara test 3 we were able to map the bond strength of a bonded wafer pair in 2 dimensions in order to determine the spatial extent and amplitude of any variation.…”

Section: Introductionmentioning

confidence: 99%