The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

Abstract

The dose dependence of as-implanted damage and the density of threading dislocations formed after MeV implants into Si is measured. The role of the damage and amorphization in the evolution of dislocation microstructure is assessed. As-implanted damage is analyzed by Rutherford backscattering spectroscopy and channeling. Defect etching is used to delineate threading dislocations in near-surface regions of annealed (900 °C, 30 min) samples. For a variety of implants with 1.1 μm projected range (600 keV B, 1 MeV P, and 2 MeV As) we observe a sharp onset for formation of threading dislocations with a peak in dislocation density at a dose of about 1×1014 cm−2, this dose depends on the ion mass. With a further increase in dose, the dislocation density decreases. This decrease, however, is drastically different for the different ions: sharp (4–5 orders of magnitude) reduction for P and As implants and slow decline for B implant. The sharp decrease in the density of threading dislocations at higher doses is correlated with the onset of amorphization observed by channeling for P and As implants. Our data for low-temperature implants provide conclusive proof that a reduction in the dislocation density for P and As implants is a result of amorphization.

Defect structure in self‐implanted silicon annealed under enhanced hydrostatic pressure – electron microscopy study

“…3 there are some limitations we should take into account. As reported by Bourdelle et al [6] not every dislocation is revealed by chemical etching. Hence, the densities obtained by this method may be somehow underestimated.…”

A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II—Latchup

“…Heavily doped buried layers (HDBL) implants have demonstrated improvements in latchup robustness in low-doped substrate wafer technology [32][33][34][35][36][37][38]. BiCMOS SiGe HBT technology and RF CMOS technology must be placed in p-substrate to provide noise isolation between digital, analog and RF circuits.…”

Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si

“…12 There have been several studies investigating the dependence of these threading dislocations on implant dose, energy species, and starting wafer. 11,[13][14][15][16] It has also been observed in these studies, that as a function of boron implant dose the threading dislocation density exhibits a maximum at a dose of around 1ϫ10 14 /cm 2 . The purpose of this study is to investigate the effect of annealing temperature and time on the evolution of the threading dislocation density at this critical dose of 1ϫ10 14 /cm 2 .…”

“…Bourdelle et al 16 have shown recently that there is a good correlation between the etch pit density and the threading dislocation density, although a few dislocations may not be etched. The etching process allowed for quantification of defect densities between 1ϫ10 4 and 1ϫ10 7 /cm 2 .…”