The effect of annealing temperature and time on synthesis of graphene thin films by rapid thermal annealing

Prekodravac, Jovana; Marković, Zoran M.; Jovanović, Svetlana P.; Budimir, Milica; Peruško, D.; Holclajtner-Antunović, Ivanka; Pavlović, Vladimir B.; Syrgiannis, Zois; Bonasera, Aurelio; Marković, Biljana M. Todorović

doi:10.1016/j.synthmet.2015.08.015

Cited by 26 publications

(7 citation statements)

References 45 publications

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“…Similar reports have been found for phototransistors based on two-dimensional graphene nanosheets (GNSs), and amorphous indium−gallium−zinc −oxide (α-IGZO) semiconductors annealed at 600 °C which exhibited excellent thin-film transistor performance [23,60]. Also, the formation of monolayer graphene thin films was found on Cu/Ni particles at 600 °C-700 °C temperatures [61]. Moreover, significant properties of MoO 3 -deposited graphene films annealed at 400 °C under a hydrogen atmosphere were investigated [62].…”

Section: Effects Of the Graphene Doping For The β-Ga 2 O 3 Tft Devicessupporting

confidence: 78%

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Feria,

Huang,

Yeh

et al. 2024

Nanotechnology

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Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizing β-Ga2O3 via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in X-ray diffraction (XRD) patterns and full surface coverage formation in scanning electron microscopy (SEM) images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesized β-Ga2O3 was fabricated as thin film transistors (TFT). The β-Ga2O3 TFT fabricated exhibits remarkable electron mobility (1.28 cm2/Vs) and a good current ratio (Ion/Ioff) of 2.06×105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene in β-Ga2O3 TFT devices, increasing the electrical device mobility by ~8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that the β-Ga2O3 networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.

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Section: Effects Of the Graphene Doping For The β-Ga 2 O 3 Tft Devicessupporting

confidence: 78%

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Feria,

Huang,

Yeh

et al. 2024

Nanotechnology

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“…Thermal Annealing basing on CVD method, produces graphene by using a couple or a multiple stack of an amorphous carbon layer deposited onto a metal layer (Ni, Co and Cu are the most common choices). The annealing dissolves the amorphous carbon into the metal layer, and thus obtaining the segregation of a thin carbon layer, i.e., graphene, onto the surface of the metal (Figure 29b) [24,124,125] Solvothermal in its turn similar to CVD method, produces graphene by means of the reaction between some chemicals in liquid phase (Figure 29c). Some reaction is based on the pyrolysis or the thermal decomposition of carbon-based precursors [24,126,127].…”

Section: Bottom Upmentioning

confidence: 99%

Two-Dimensional Carbon: A Review of Synthesis Methods, and Electronic, Optical, and Vibrational Properties of Single-Layer Graphene

Armano

Agnello

2019

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Graphite has been widely used by humans for a large part of their history. Nevertheless, it has only recently been possible to isolate its basic unit: carbon atoms arranged in a honeycomb structure on a single plane, namely graphene. Since its discovery, many techniques have been developed and improved to properly synthesize graphene and its derivatives which are part of the novel class of two-dimensional materials. These advanced materials have imposed themselves in nanotechnology thanks to some outstanding physical properties due to their reduced dimensions. In the case of graphene, its reduced dimension gives rise to a high electrical mobility, a large thermal conductivity, a high mechanical resistance, and a large optical transparency. Therefore, such aspect is of great scientific interest for both basic and applied research, ranging from theoretical physics to surface chemistry and applied solid state physics. The connection between all these fields is guaranteed by spectroscopy and especially by Raman spectroscopy which provides a lot of information about structural and electronic features of graphene. In this review, the authors present a systematized collection of the most important physical insights on the fundamental electronic and vibrational properties of graphene, their connection with basic optical and Raman spectroscopy, and a brief overview of main synthesis methods.

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“…So, this can also support the I 2D /I G ¼ 1.56 ratio of the same film by increasing G intensity as a result of amorphous carbon accumulation on the film. [28,29] The film quality worsened with further increase in the growth time, 15 min., which led to multilayer graphene synthesis. These evaluations were based on the Raman spectra of the doped graphene films presented in Figure 3.…”

Section: Resultsmentioning

confidence: 99%

Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron‐Doped Graphene

Zan

2021

Physica Status Solidi (a)

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Herein, the synthesis of a stable and homogeneous boron‐doped graphene film using triethylborane as a single source of carbon and boron is reported. The effects of triethylborane amount and growth time on the synthesis of doped graphene are investigated under the same growth conditions on polycrystalline copper foil in a three‐zone chemical vapor deposition (CVD) system, which has not thus far been researched in detail. The findings show that boron‐doped graphene films are successfully synthesized. The results enable the design of a recipe for thin‐film doped graphene grown with optimum optical transmission and sheet resistance via amending TEB molarity and growth time. Such changes suggest that the single‐layer graphene film with high homogeneity can be obtained for the film grown using 0.5 m triethylborane along with 10 min growth time as confirmed by Raman mapping and atomic force microscope (AFM) measurements. It is further revealed that increasing the amount of triethylborane and growth times leads to the formation of thicker graphene films. In addition, X‐ray photoelectron spectrometer (XPS) measurements indicate that boron atoms get into a honeycomb structure, thanks to substitutional doping. The findings of this study have significant implications for the implementation of boron‐doped graphene films in semiconductor‐based technology.

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The effect of annealing temperature and time on synthesis of graphene thin films by rapid thermal annealing

Cited by 26 publications

References 45 publications

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Two-Dimensional Carbon: A Review of Synthesis Methods, and Electronic, Optical, and Vibrational Properties of Single-Layer Graphene

Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron‐Doped Graphene

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The effect of annealing temperature and time on synthesis of graphene thin films by rapid thermal annealing

Cited by 26 publications

References 45 publications

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Two-Dimensional Carbon: A Review of Synthesis Methods, and Electronic, Optical, and Vibrational Properties of Single-Layer Graphene

Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron‐Doped Graphene

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Resources

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Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides