The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes

Cho, Hyung Jun; Lee, Sung Uk; Hong, Byungyou; Shin, Yong Deok; Ju, Jin Young; Kim, Hee Dong; Park, Mungi; Choi, Won Seok

doi:10.1016/j.tsf.2009.10.130

Cited by 69 publications

(20 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Despite the low semiconductor volume fraction and disordered morphology, the annealed and Al 2 O 3 -coated ZnO nanocrystal films exhibit electron mobilities comparable to ZnO films deposited by physical vapour deposition techniques 23 . To shed light on the mechanism by which the ALD Al 2 O 3 is improving the conductivity of the ZnO nanocrystal films, we studied the species present on the nanocrystal surfaces before and after ALD coating, using transmission Fourier-transform infrared Figure 5 shows the FTIR absorption spectra of a film comprising as-deposited ZnO nanocrystals on a NaCl substrate before and after coating with 7.7 nm Al 2 O 3 .…”

Section: Article Nature Communications | Doi: 101038/ncomms6822mentioning

confidence: 93%

High electron mobility in thin films formed via supersonic impact deposition of nanocrystals synthesized in nonthermal plasmas

et al. 2014

View full text Add to dashboard Cite

Thin films comprising semiconductor nanocrystals are emerging for applications in electronic and optoelectronic devices including light emitting diodes and solar cells. Achieving high charge carrier mobility in these films requires the identification and elimination of electronic traps on the nanocrystal surfaces. Herein, we show that in films comprising ZnO nanocrystals, an electron acceptor trap related to the presence of OH on the surface limits the conductivity. ZnO nanocrystal films were synthesized using a nonthermal plasma from diethyl zinc and oxygen and deposited by inertial impaction onto a variety of substrates. Surprisingly, coating the ZnO nanocrystals with a few nanometres of Al 2 O 3 using atomic layer deposition decreased the film resistivity by seven orders of magnitude to values as low as 0.12 O cm. Electron mobility as high as 3 cm 2 V À 1 s À 1 was observed in films comprising annealed ZnO nanocrystals coated with Al 2 O 3 .

show abstract

Section: Article Nature Communications | Doi: 101038/ncomms6822mentioning

confidence: 93%

High electron mobility in thin films formed via supersonic impact deposition of nanocrystals synthesized in nonthermal plasmas

et al. 2014

View full text Add to dashboard Cite

show abstract

“…Transparent Conductive Oxides (TCO) films play a significant role as an transparent electrode in the optoelectronic and photovoltaic devices, especially in thin films solar cells [1][2][3][4][5][6]. The most widely used TCO, both in research and industry, are Indium Tin Oxide (ITO) films, because they are characterized by a good electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Krawczak¹,

Zdyb²,

Gulkowski³

et al. 2017

E3S Web Conf.

View full text Add to dashboard Cite

Abstract. Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

show abstract

“…Раніше досліджувався вплив на властивості легованих алюмінієм плівок ZnO: (і) технологічних параметрів магнетронного осадження ( температура підкладки [15], тиски кисню [16] та аргону [17], потужність магнетрону [18], ( іі) технологічних прийомів осадження (подвійне легування [19], вибір катодної системи [20], створення багатошарових плівок [21,22], підготовки поверхні [23] тощо) та (ііі) термічного відпалу щойно вирощених плівок [24,25]. Для покращення властивостей плівок ZnO, осаджених на різні типи підкладок, нами був запропонований в високочастотному (ВЧ) МР метод пошарового (постадійного) росту [26,27].…”

Section: вступunclassified

The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering

Evtushenko

Bykov

Klochkov

et al. 2015

PCSS

View full text Add to dashboard Cite

show abstract

The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes

Cited by 69 publications

References 15 publications

High electron mobility in thin films formed via supersonic impact deposition of nanocrystals synthesized in nonthermal plasmas

High electron mobility in thin films formed via supersonic impact deposition of nanocrystals synthesized in nonthermal plasmas

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering

Contact Info

Product

Resources

About