The effect of aluminum mole fraction on the surface microroughness and morphology of Al<i>x</i>Ga1−<i>x</i>As grown at low temperature by molecular beam epitaxy

Fatt, Yoon Soon

doi:10.1063/1.352972

Cited by 6 publications

(4 citation statements)

References 15 publications

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“…20 In addition, the same study found an increased roughening at a fixed temperature for increases in Al composition which was attributed to the lower relative Al adatom mobility compared to Ga. 20 In addition, the same study found an increased roughening at a fixed temperature for increases in Al composition which was attributed to the lower relative Al adatom mobility compared to Ga.…”

Section: A Surface Evolution Studiesmentioning

confidence: 94%

Role of Al content on surface structure evolution of low temperature AlxGa1−xAs and its effect on critical thickness

Carlin¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy J. Appl. Phys. 85, 1550 (1999; 10.1063/1.369286 Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substrates Reflection high energy electron diffraction ͑RHEED͒ has been used to track the evolution of both low temperature ͑LT͒ GaAs and LT-Al x Ga 1Ϫx As growth surfaces. LT-Al x Ga 1Ϫx As surfaces have been found to roughen by a pyramidal defect formation similar to that reported for LT-GaAs over the entire range of aluminum compositions. Correlations between RHEED and transmission electron microscopy ͑TEM͒ results indicate that the critical thickness found using the formation of extra fourth order diffraction spots as a marker correlate well to the nucleation of pyramidal defects. Additionally, results for the critical thickness of layers grown over the range of aluminum compositions indicate an exponential decrease in the critical thickness with increasing aluminum composition under similar growth conditions. While the mechanism for this dependence is still unclear, it does not appear to be related to an increase in the excess arsenic incorporation with increasing Al composition.

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Section: A Surface Evolution Studiesmentioning

confidence: 94%

Role of Al content on surface structure evolution of low temperature AlxGa1−xAs and its effect on critical thickness

Carlin¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…We also expect propagation losses to be limited by scattering due to the sidewall imperfection of the waveguide from the fabrication process. Sidewall roughness was found to increase with the aluminum mole fraction which in turn increases surface scattering [42].…”

Section: Designmentioning

confidence: 97%

Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides

Madsen¹,

Ulsig²,

Godoy³

et al. 2023

J. Opt. Soc. Am. B

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A design study is presented for difference-frequency generation (DFG) to the mid-infrared (MIR) at 2.3 µm in AlGaAs waveguides heterogeneously integrated on silicon. Perfect phase matching (PhM) is achieved in simulations by engineering the dimensions of the waveguide and by tuning the wavelengths of the input sources. An optimal design of the waveguide is found with a width of 1196 nm and height of 146 nm with a length of about 5 mm. We expect a signal output power of about 1 mW at 2389 nm and a wavelength range from 2231 to 2574 nm by the use of tunable sources around 940 and 1550 nm. The tolerance of the input wavelengths and waveguide dimensions required for perfect PhM is also estimated showing the feasibility of the fabrication. This offers a promising design for a compact MIR source on a chip to be used for gas sensing, in particular for carbon monoxide and ammonia, and for DFG of single photons to the C-band.

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“…[1][2][3][4][5][6][7] It has been reported that low temperature grown (LT-) AlGaAs layers contain a large amount of nonstoichiometric defects such as arsenic antisites, [1][2][3][4][5][6][7] or arsenic precipitates. As a result, low temperature processes with low damage may have an important role in avoiding serious degradation of microscopic structures, and several studies have been reported.…”

mentioning

confidence: 99%

“…As a result, low temperature processes with low damage may have an important role in avoiding serious degradation of microscopic structures, and several studies have been reported. [1][2][3][4][5][6][7] It has been reported that low temperature grown (LT-) AlGaAs layers contain a large amount of nonstoichiometric defects such as arsenic antisites, [1][2][3][4][5][6][7] or arsenic precipitates. 5 Thus, it is very important to study the characteristics of LT-AlGaAs.…”

mentioning

confidence: 99%

Persistent Photoconductivity of Low Temperature Grown AlGaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Al/(CH[sub 3])[sub 3]Ga/AsH[sub 3]

Oyama¹,

Watanabe²,

Matsumoto

et al. 2000

J. Electrochem. Soc.

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The persistent photoconductivity (PPC) of undoped low temperature grown n-AlGaAs has been investigated by temperature-dependent resistance measurements. Five distinct peaks were observed in the resistance measurement results during recovery of the PPC, and the PPC remained up to 260 K. In a sample with a low donor concentration of 10 15 cm Ϫ3 , a new current-dependent PPC also was observed at around 25 K.

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The effect of aluminum mole fraction on the surface microroughness and morphology of AlxGa1−xAs grown at low temperature by molecular beam epitaxy

Cited by 6 publications

References 15 publications

Role of Al content on surface structure evolution of low temperature AlxGa1−xAs and its effect on critical thickness

Role of Al content on surface structure evolution of low temperature AlxGa1−xAs and its effect on critical thickness

Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides

Persistent Photoconductivity of Low Temperature Grown AlGaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Al/(CH[sub 3])[sub 3]Ga/AsH[sub 3]

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