The effect of a transverse magnetic field on 1<i>/f</i> noise in graphene

Rumyantsev, Sergey; Coquillat, Dominique; Ribeiro-Palau, Rebeca; Goiran, M.; Knap, W.; Shur, M. S.; Balandin, Alexander A.; Levinshteǐn, M. E.

doi:10.1063/1.4826644

Cited by 19 publications

(16 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5d, V g 0.8 V). The larger detection limit compared to measurements at zero field is a result of both the reduced R H and a general increase in voltage noise in large background magnetic field, which is correlated with large longitudinal magnetoresistance and may also be attributed to charge fluctuations between localized and extended quantum Hall states 36,37 .…”

Section: Resultsmentioning

confidence: 99%

Magnetic field detection limits for ultraclean graphene Hall sensors

et al. 2020

View full text Add to dashboard Cite

Solid-state magnetic field sensors are important for applications in commercial electronics and fundamental materials research. Most magnetic field sensors function in a limited range of temperature and magnetic field, but Hall sensors in principle operate over a broad range of these conditions. Here, we evaluate ultraclean graphene as a material platform for highperformance Hall sensors. We fabricate micrometer-scale devices from graphene encapsulated with hexagonal boron nitride and few-layer graphite. We optimize the magnetic field detection limit under different conditions. At 1 kHz for a 1 μm device, we estimate a detection limit of 700 nT Hz −1/2 at room temperature, 80 nT Hz −1/2 at 4.2 K, and 3 μT Hz −1/2 in 3 T background field at 4.2 K. Our devices perform similarly to the best Hall sensors reported in the literature at room temperature, outperform other Hall sensors at 4.2 K, and demonstrate high performance in a few-Tesla magnetic field at which the sensors exhibit the quantum Hall effect.

show abstract

Section: Resultsmentioning

confidence: 99%

Magnetic field detection limits for ultraclean graphene Hall sensors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The physical effects discussed above might also explain the magnetic field dependence of the 1/f noise PSD observed at temperatures of 80 K and 285 K by Rumyantsev et al [68], since the quantum Hall effect in graphene persists up to room temperature in strong magnetic fields.…”

Section: Magnetic Field Dependence Of 1/ F Noisementioning

confidence: 87%

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

et al. 2016

View full text Add to dashboard Cite

We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current, and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the Kubakaddi theory [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations, a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and quantum Hall breakdown sets in.

show abstract

“…Amonst various types of noise, the 1/f α noise, which is also known as 'flicker' noise, is known to originate due to many processes occoring at atomic level. 11,[31][32][33][34][35][36][37][38] It has been reported that carbon nanotubes based cold cathode suffer from long-term current stability due to fast degradation rate, even though the cathode is competent to deliver high emission current density. 39 Recently, Hossain et.…”

Section: Introductionmentioning

confidence: 99%