Low frequency noise and photo-enhanced field emission from ultrathin PbBi<sub>2</sub>Se<sub>4</sub> nanosheets

Suryawanshi, Sachin R.; Guin, Satya N.; Chatterjee, Arindom; Kashid, Vikas; More, Mahendra A.; Late, Dattatray J.; Biswas, Kanishka

doi:10.1039/c5tc02993g

Cited by 15 publications

(3 citation statements)

References 47 publications

(64 reference statements)

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“…[38] Some of the TIs, Bi 2 Se 3 , and PbBi 2 Se 4 have been studied for their FE behavior. [39][40][41] These planar emitters have shown promising characteristics, which are attributed to the robust conducting surface states. Recently our group has reported FE characteristics of hydrothermally synthesized Sb 2 Te 3 micron-sized hexagonal platelets.…”

Section: Introductionmentioning

confidence: 99%

Systematic Field Electron Emission Investigations of Vapor‐Phase‐Grown Sb₂Te₃Nanosheets

Bhopale

2022

Physica Status Solidi (a)

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Micron‐sized Sb2Te3 nanosheets are grown on p‐type Si substrate by facile vapor‐phase route. Physicochemical properties of the Sb2Te3 nanosheets are revealed using X‐ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), transmission electron microscope (TEM), Raman spectroscopy, and X‐ray photoelectron spectroscopy (XPS). Owing to their high aspect ratio, field emission (FE) characteristics of the Sb2Te3 nanosheets grown on Si substrate (termed as a “planar emitter”) are investigated. Furthermore, the FE behavior of a single Sb2Te3 nanosheet attached to a blunt tungsten needle is studied. The single nanosheet emitter exhibited superior emission behavior in contrast to the planar emitter. The Fowler–Nordheim (F–N) plot for the single nanosheet emitter exhibits linear nature, whereas for the planar emitter it shows deviation from linearity. An attempt has been made to reveal the FE properties of a single Sb2Te3 nanosheet in an “in‐plane” configuration, similar to the vacuum field emission transistor (VFET). In this case, a maximum emission current of 1 μA is observed at 290 V, which is comparable to other VFETs. The observed results clearly imply the potential of the single nanosheet emitters due to topological insulators, like Sb2Te3, for the development of new generation nanoscale vacuum electronic devices.

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Section: Introductionmentioning

confidence: 99%

Systematic Field Electron Emission Investigations of Vapor‐Phase‐Grown Sb₂Te₃Nanosheets

Bhopale

2022

Physica Status Solidi (a)

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“…From the temperature‐dependent electrical conductivity and Seebeck coefficient analysis, it is revealed that PbBi 2 Se 4 has high mobility of charge carriers at room temperature. Recently, Suryawanshi et al reported the photofield emission behavior and spectral analysis of few layered PbBi 2 Se 4 nano‐sheets emitter under visible light illumination. The photo field behavior was envisaged by reduction in turn‐on field and delivery of higher emission current density at relatively lower applied field, which is attributed to photosensitive nature of PbBi 2 Se 4 .…”

Section: Introductionmentioning

confidence: 99%

Solvothermal Growth of PbBi₂Se₄ Nano‐Flowers: A Material for Humidity Sensor and Photodetector Applications

Aher

Bhorde

Nair

et al. 2019

Physica Status Solidi (a)

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In the present work, lead bismuth selenide (PbBi 2 Se 4 ) nano-flowers are synthesized by using a simple solvothermal method. Humidity sensor and photodetector based on PbBi 2 Se 4 nano-flowers are fabricated on indium tin oxide (ITO) substrates and their sensing properties are investigated. Formation of PbBi 2 Se 4 is confirmed by XRD, EDS, and XPS whereas formation of nano-flowers is confirmed by SEM and TEM analysis. XRD analysis reveals the hexagonal crystal structure of PbBi 2 Se 4 phase with a ¼ b ¼ 4.22 Å, and c ¼ 17.42 Å. The surface morphology of PbBi 2 Se 4 clearly shows the formation of well-organized flower-like nanostructures which closely resembles the shape of Dahlia. The elemental mapping of chemical constituents obtained from SEM-EDS analysis shows uniform distribution of chemical constituents for the Pb, Bi, and Se in PbBi 2 Se 4 nano-flowers. The PbBi 2 Se 4 nano-flowersbased humidity sensor has a typical response time of %65 s and recovery time of %75 s. In case of PbBi 2 Se 4 nano-flowers-based photodetector, the response and recovery time are observed %121 and %123 s, respectively, under visible light illumination with photoresponsivity (5 Â 10 À6 ), photosensitivity (2.16%), and quantum efficiency (1.5 Â 10 4 ). The obtained results demonstrate the potential applications of solvothermally grown PbBi 2 Se 4 nano-flowers-based devices for humidity sensors and photodetectors. The ease of the present work is to develop novel material to obtain device quality humidity sensors and photodetectors.

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“…Such a process makes actively controlled ultra-fast electron emission possible [18][19][20][21], thus forming a series of applications, such as the state-of-the-art time-resolved electron microscopy and spectroscopy that can access temporal dynamics on a solid surface with high spatial resolution [22][23][24]. In addition, more importantly, this laser-triggered optical field has been demonstrated to assist in the field electron emission process and improve the performance from a specific emitter by taking advantage of the synergy with the fixed electrostatic field [25][26][27][28]. However, the corresponding in situ analysis is insufficient to reveal the essence of such a multi-fields-driven electron emission, although some preliminary results about polarization dependence as well as emitted electron spectrum have been reported on a carbon nanotip sample [29].…”

Section: Introductionmentioning

confidence: 99%

An in situ characterization technique for electron emission behavior under a photo-electric-common-excitation field: study on the vertical few-layer graphene individuals

et al. 2019

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The in situ characterization on the individuals offers an effective way to explore the dynamic behaviors and underlying physics of materials at the nanoscale, and this is of benefit for actual applications. In the field of vacuum micro-nano electronics, the existing in situ techniques can obtain the material information such as structure, morphology and composition in the process of electron emission driven by a single source of excitation. However, the relevant process and mechanism become more complicated when two or more excitation sources are commonly acted on the emitters. In this paper, we present an in situ nano characterization technique to trigger and record the electron emission behavior under the photo-electric-common-excitation multiple physical fields. Specifically, we probed into the in situ electron emission from an individual vertical few-layer graphene (vFLG) emitter under a laser-plus-electrostatic driving field. Electrons were driven out from the vFLG’s emission edge, operated in situ under an external electrostatic field coupled with a 785 nm continuous-wave laser-triggered optical field. The incident light has been demonstrated to significantly improve the electron emission properties of graphene, which were recorded as an obvious decrease of the turn-on voltage, a higher emission current by factor of 35, as well as a photo-response on-off ratio as high as 5. More importantly, during their actual electron emission process, a series of in situ characterizations such as SEM observation and Raman spectra were used to study the structure, composition and even real-time Raman frequency changes of the emitters. These information can further reveal the key factors for the electron emission properties, such as field enhancement, work function and real-time surface temperature. Thereafter, the emission mechanism of vFLG in this study has been semi-quantitatively demonstrated to be the two concurrent processes of photon-assisted thermal enhanced field emission and photo field emission.

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Low frequency noise and photo-enhanced field emission from ultrathin PbBi₂Se₄ nanosheets

Abstract: PbBi2Se4 nanosheets demonstrate high performance and extremely stable photosensitive field emission with low frequency noise.

Cited by 15 publications

References 47 publications

Systematic Field Electron Emission Investigations of Vapor‐Phase‐Grown Sb₂Te₃Nanosheets

Systematic Field Electron Emission Investigations of Vapor‐Phase‐Grown Sb₂Te₃Nanosheets

Solvothermal Growth of PbBi₂Se₄ Nano‐Flowers: A Material for Humidity Sensor and Photodetector Applications

An in situ characterization technique for electron emission behavior under a photo-electric-common-excitation field: study on the vertical few-layer graphene individuals

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Low frequency noise and photo-enhanced field emission from ultrathin PbBi2Se4 nanosheets

Abstract: PbBi2Se4 nanosheets demonstrate high performance and extremely stable photosensitive field emission with low frequency noise.

Cited by 15 publications

References 47 publications

Systematic Field Electron Emission Investigations of Vapor‐Phase‐Grown Sb2Te3Nanosheets

Systematic Field Electron Emission Investigations of Vapor‐Phase‐Grown Sb2Te3Nanosheets

Solvothermal Growth of PbBi2Se4 Nano‐Flowers: A Material for Humidity Sensor and Photodetector Applications

An in situ characterization technique for electron emission behavior under a photo-electric-common-excitation field: study on the vertical few-layer graphene individuals

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Product

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Low frequency noise and photo-enhanced field emission from ultrathin PbBi₂Se₄ nanosheets

Systematic Field Electron Emission Investigations of Vapor‐Phase‐Grown Sb₂Te₃Nanosheets

Systematic Field Electron Emission Investigations of Vapor‐Phase‐Grown Sb₂Te₃Nanosheets

Solvothermal Growth of PbBi₂Se₄ Nano‐Flowers: A Material for Humidity Sensor and Photodetector Applications