2009
DOI: 10.1088/0268-1242/24/4/045011
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The effect of a material growth technique on ion-implanted Mn diffusion in GaAs

Abstract: Diffusion of ion-implanted Mn in semi-insulating (SI) and liquid encapsulated Czochralski (LEC)-grown GaAs has been determined employing the modified radiotracer technique. The effect of the growth technique and conditions on Mn diffusion in low temperature molecular beam epitaxy (LT-MBE)-grown GaAs has also been studied. Two distinct diffusion components appear in ion-implanted Mn diffusion in GaAs: slow and fast. As the diffusivity for the SI material is slightly higher than that for the LT-grown material, i… Show more

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Cited by 7 publications
(6 citation statements)
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“…Fig. 4), which is in agreement with a recent radio-tracer study on the diffusion of Mn in GaAs, 30 yielding an activation energy of ∼3 eV.…”
Section: Substitutional Mnsupporting
confidence: 91%
See 1 more Smart Citation
“…Fig. 4), which is in agreement with a recent radio-tracer study on the diffusion of Mn in GaAs, 30 yielding an activation energy of ∼3 eV.…”
Section: Substitutional Mnsupporting
confidence: 91%
“…The estimated activation energy is therefore the same as for the scenario of long-range diffusion without precipitation (E a = 2.9 eV), and consistent with the radio-tracer measurements mentioned above. 30 …”
Section: Substitutional Mnmentioning
confidence: 99%
“…In fact, the fast component in Ref. 11 (with E a ≈ 3 eV) more likely corresponds to Frank-Turnbull diffusion of the substitutional Mn fraction via interstitial sites, since E a is well above the maximum estimated here for the direct interstitial diffusion of the interstitial Mn fraction (2.3 eV).…”
mentioning
confidence: 62%
“…In order to perform experiments with short-lived isotopes, sophisticated on-line radiotracer setups have been constructed, which allow to carry out all steps in a minimum of time. During recent years the tracer diffusion studies have investigated transition metal diffusion in CdTe [41][42][43][44] and diffusion of Be, Ga, and Sn in Ge and SiGe alloys [45][46][47][48], of Be in glassy carbon [49] and of Mn in GaAs [50]. Figure 4 shows concentration profiles of the radiotracers 111 Ag, 67 Cu,193 Au, and 24 Na measured in CdTe crystals after implantation and subsequent diffusion under external Cd pressure [41][42][43][44].…”
Section: Tracer Diffusionmentioning
confidence: 99%