Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

Pereira, L. M. C.; Wahl, Ulrich; Decoster, Stefan; Correia, J. G.; Silva, M.R. da; Vantomme, André; Araújo, João P.

doi:10.1063/1.3592568

Cited by 27 publications

(21 citation statements)

References 14 publications

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“…Similar estimates are described in more detail in Ref. 35. The magenta and green curves in Fig.3 correspond to the two extreme cases for the site change in sample C. The case with N ∼200000 (green curve) provides a lower limit for the activation energy of E M =1.1 eV, whereas the 1-step model gives E M =1.7 eV (two magenta curves, for the low-fluence and high-fluence case, respectively).…”

supporting

confidence: 67%

Precise lattice location of substitutional and interstitial Mg in AlN

Amorim

Wahl

Pereira

et al. 2013

Applied Physics Letters

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The lattice site location of radioactive 27Mg implanted in AlN was determined by means of emission channeling. The majority of the 27Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 Å experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites, in the context of the current debate, on Mg doped nitride semiconductors.

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confidence: 67%

Precise lattice location of substitutional and interstitial Mg in AlN

Amorim

Wahl

Pereira

et al. 2013

Applied Physics Letters

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“…Models based on structural fragments can be used to assess influencing factors to the superconductivity critical temperature (Isayev et al, 2015). Interstitials in dense inorganic materials are frequently found in positions where the interstitials assume tetrahedrally or octahedrally coordinated positions (Decoster et al, 2008(Decoster et al, , 2009a(Decoster et al, ,b, 2010a(Decoster et al, ,b, 2012Pereira et al, 2011Pereira et al, , 2012Amorim et al, 2013;Silva et al, 2014).…”

Section: Introductionmentioning

confidence: 99%

Assessing Local Structure Motifs Using Order Parameters for Motif Recognition, Interstitial Identification, and Diffusion Path Characterization

et al. 2017

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Structure-property relationships form the basis of many design rules in materials science, including synthesizability and long-term stability of catalysts, control of electrical and optoelectronic behavior in semiconductors, as well as the capacity of and transport properties in cathode materials for rechargeable batteries. The immediate atomic environments (i.e., the first coordination shells) of a few atomic sites are often a key factor in achieving a desired property. Some of the most frequently encountered coordination patterns are tetrahedra, octahedra, body and face-centered cubic as well as hexagonal close packedlike environments. Here, we showcase the usefulness of local order parameters to identify these basic structural motifs in inorganic solid materials by developing classification criteria. We introduce a systematic testing framework, the Einstein crystal test rig, that probes the response of order parameters to distortions in perfect motifs to validate our approach. Subsequently, we highlight three important application cases. First, we map basic crystal structure information of a large materials database in an intuitive manner by screening the Materials Project (MP) database (61,422 compounds) for elementspecific motif distributions. Second, we use the structure-motif recognition capabilities to automatically find interstitials in metals, semiconductor, and insulator materials. Our Interstitialcy Finding Tool (InFiT) facilitates high-throughput screenings of defect properties. Third, the order parameters are reliable and compact quantitative structure descriptors for characterizing diffusion hops of intercalants as our example of magnesium in MnO 2 -spinel indicates. Finally, the tools developed in our work are readily and freely available as software implementations in the pymatgen library, and we expect them to be further applied to machine-learning approaches for emerging applications in materials science.

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“…• C [15]. Междоузельный марганец, который является центром безызлучательной рекомбинации в соединениях на основе GaAs [16], диффундирует вглубь структуры и достигает квантовой ямы за время формирования покровного слоя GaAs.…”

Section: экспериментальные результаты и обсуждениеunclassified

Влияние термического отжига на фотолюминесценцию структур с InGaAs/GaAs квантовыми ямами и низкотемпературным delta-легированным Mn слоем GaAs

Kalent’eva¹,

Vikhrova²,

Данилов³

et al. 2016

Физика И Техника Полупроводников

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Исследовано влияние термических изохронных отжигов (325-725oC) на излучательные свойства InGaAs/GaAs гетеронаноструктур, содержащих низкотемпературный delta-легированный Mn слой GaAs, выращенный методом лазерного осаждения. Наблюдается спад интенсивности фотолюминесценции и увеличение энергии основного перехода при термическом воздействии для квантовых ям, расположенных вблизи низкотемпературного слоя GaAs. Вторичной ионной масс-спектрометрией получено распределение атомов Mn в исходных и отожженных структурах. Обсуждается качественная модель наблюдаемого влияния термического отжига на излучательные свойства структур, которая учитывает наличие двух основных процессов: диффузии точечных дефектов (в первую очередь вакансий галлия) из покровного слоя GaAs в глубь структуры и диффузии Mn в обоих направлениях по диссоциативному механизму. Исследования намагниченности показали, что в результате термических отжигов происходит возрастание доли ферромагнитной при комнатной температуре фазы (предположительно, кластеров MnAs) в низкотемпературном покровном слое.

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Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

Cited by 27 publications

References 14 publications

Precise lattice location of substitutional and interstitial Mg in AlN

Precise lattice location of substitutional and interstitial Mg in AlN

Assessing Local Structure Motifs Using Order Parameters for Motif Recognition, Interstitial Identification, and Diffusion Path Characterization

Влияние термического отжига на фотолюминесценцию структур с InGaAs/GaAs квантовыми ямами и низкотемпературным delta-легированным Mn слоем GaAs

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