The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures

Pavlyk, B.; Hrypa, A. S.; Slobodzyan, Dmytro; Lys, R. M.; Shykoryak, J. A.; Didyk, R. I.

doi:10.1134/s1063782611050241

Cited by 8 publications

(5 citation statements)

References 2 publications

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“…As it was shown in our previous studies [ 12 , 13 ], the dielectric film SiO 2 has a positive charge. Therefore, the space charge surface layer depleted in holes (with high resistance) and with a thickness w (Fig.…”

Section: Resultssupporting

confidence: 66%

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Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

et al. 2017

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Changes in conductivity of irradiated and non-irradiated p-Si mono-crystals under the influence of elastic uniaxial mechanical stress were investigated in this paper. An analytical expression was suggested to describe the dependence of surface conductivity as a function of mechanical stress and X-ray irradiation dose. It was shown that 4-angular nano-particles on the surface of “solar” silicon affect the electroconductivity changes under mechanical stress. It was established that X-ray irradiation causes the generation of point defects in silicon. These defects suppress the dislocations movement. It was shown that the resistivity of previously irradiated samples of “electronic” silicon is only slightly sensitive to the influence of uniaxial compression at certain deformation rate.

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Section: Resultssupporting

confidence: 66%

“…According to our previous studies, [ 10 – 13 ], the effect of X-ray exposure to the electronic silicon is accompanied by a slight increase in positive charge in the dielectric surface layer of SiO 2 . As a result, the factor β 1 : β 1 ( D ) > β 1 ( 0 ) slightly increases.…”

Section: Resultsmentioning

confidence: 91%

Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

et al. 2017

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“…As a result, the charge state of electrically active centres changes and their neutralization occurs. Consequently, a decrease in conductivity may happen [23].…”

Section: Resultsmentioning

confidence: 99%

Magnetically stimulated changes in the electrophysical properties of the near-surface silicon layer

Pavlyk¹,

Slobodzyan²,

Lys³

et al. 2020

J. Phys. Stud.

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This papers presents the results of the inuence of a weak magnetic eld (MF) (0.354 T) on the electrophysical properties of surface structures based on p-Si. A 300-hours exposure of singlecrystal silicon samples in a magnetic eld stimulates the decay of hydrogen-containing and oxygencontaining surface complexes (ÑHX , SiOH, ÎÍ) and the formation of SiH3 centers. As a result, the surface resistance increases and the barrier properties of the BiSi(p) contact deteriorate

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“…У роботi [4] показано, що цей максимум вiдповiдає ємностi дiелектричного прошарку мiж металом i напiвпровiдником. Незважаючи на технологiчнi операцiї з формування дiодної структури Bi-Si-Al (хiмiчне травлення, промивання, просушування, термовiдпал у вакуумi за p ∼ 10 −5 Па), формується природнiй окисел SiO 2 , товщина якого не перевищує 1-2 нм [9].…”

Section: результати дослIджень та їхнє обговоренняunclassified

Restructuring of the defected structure and centers of dislocation luminescence in the p-Si surface layers

Pavlyk¹,

Kushlyk²,

Slobodzyan³

et al. 2017

J. Phys. Stud.

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Методом ємнiсно-модуляцiйної спектроскопiї глибоких рiвнiв, IЧ-спектроскопiї коливних рiвнiв молекул та атомiв дослiджено змiни дефектної структури приповерхневого шару кристалiв кремнiю p-типу провiдностi за дiї пластичної деформацiї та високотемпературного вiдпалу в атмосферi проточного кисню. Установлено особливу роль дислокацiй у приповерхневому шарi кремнiю при формуваннi його енерґетичного спектра та перебудовi дефектної структури. Показано, що при концентрацiї дислокацiй 10 5 см −2 приповерхневий шар збагачується електрично активними комплексами (дислокацiя-кисень, дислокацiя-вакансiя, дислокацiямiжвузловий атом кремнiю), якi є ефективними центрами випромiнювальної рекомбiнацiї.Ключовi слова: кремнiй, дислокацiя, глибокий рiвень, IЧ-спектроскопiя, поверхневi стани, високотемпературний вiдпал.

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The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures

Cited by 8 publications

References 2 publications

Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

Magnetically stimulated changes in the electrophysical properties of the near-surface silicon layer

Restructuring of the defected structure and centers of dislocation luminescence in the p-Si surface layers

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