The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. III. Initial conditions

Cerofolini, G. F.; Galati, C.; Lorenti, Simona; Renna, L.; Viscuso, O.; Bongiorno, Corrado; Raineri, V.; Spinella, C.; Condorelli, Guglielmo G.; Fragalá, Ignazio L.; Terrasi, A.

doi:10.1007/s00339-002-1997-0

Cited by 35 publications

(28 citation statements)

References 21 publications

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“…In all cases, the O 1s spectra show a component centered at 532.0 eV attributable to the oxidized silicon. [10] For the pure ester, as well as for the diluted surfaces, the O 1s band consists of two more components centered at 533.1 and 534.2 eV, which are assigned to the >C=O and =CÀOÀ R groups, respectively, even though slightly higher BE values than those typically reported for polymers are observed (Figure 2c and d). [7,12] These bands are, of course, not present in the case of pure 1-decene ( Figure 2b).…”

Section: Resultsmentioning

confidence: 73%

“…The absence of any signal (at around 103 eV BE) [10] due to oxidized Si, even after some days of air exposure, points unequivocally (for all ester/decene ratios) to an efficient passivation of surfaces by the organic overlayer.…”

Section: Resultsmentioning

confidence: 86%

“…X-ray photoemission spectroscopy: The XPS binding energy (BE) scale was calibrated by centering the Si 2p 3/2 peak at 99.0 eV [10] . Figure 2 shows the Si signal of a fresh, HFetched surface (a), of a pure decene monolayer (b), and of a pure ester monolayer before (c) and after (d) the Mn-anchoring step.…”

Section: Resultsmentioning

confidence: 99%

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Density Control of Dodecamanganese Clusters Anchored on Silicon(100)

Condorelli

Motta

Favazza

et al. 2006

Chemistry A European J

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A synthetic strategy to control the density of Mn12 clusters anchored on silicon(100) was investigated. Diluted monolayers suitable for Mn12 anchoring were prepared by Si-grafting mixtures of the methyl 10-undecylenoate precursor ligand with 1-decene spectator spacers. Different ratios of these mixtures were tested. The grafted surfaces were hydrolyzed to reveal the carboxylic groups available for the subsequent exchange with the [Mn12O12(OAc)16(H2O)4]4 H2O2 AcOH cluster. Modified surfaces were analyzed by attenuated total reflection (ATR)-FTIR spectroscopy, X-ray photoemission spectroscopy (XPS), and AFM imaging. Results of XPS and ATR-FTIR spectroscopy show that the surface mole ratio between grafted ester and decene is higher than in the source solution. The surface density of the Mn12 cluster is, in turn, strictly proportional to the ester mole fraction. Well-resolved and isolated clusters were observed by AFM, using a diluted ester/decene 1:1 solution.

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Section: Resultsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 86%

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Density Control of Dodecamanganese Clusters Anchored on Silicon(100)

Condorelli

Motta

Favazza

et al. 2006

Chemistry A European J

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“…(The temperatures given above, measured with a thermocouple, are probably underestimated; the optical pyrometer measurement provided indeed somewhat higher values. 12 ) For T > 600°C reference sample (a) gives evidence for an emission shoulder. This emission may be attributed to H 2 elimination from geminal dihydrogen terminations in residual unreacted SiH 2 groups, vicinal mono-hydrogen terminations not belonging to the same (SiH) 2 dimer, etc.…”

Section: Resultsmentioning

confidence: 97%

XPS, AFM, ATR and TPD evidence for terraced, dihydrogen terminated, 1×1 (100) silicon

Cerofolini

Calì

Galati

et al. 2005

Surf. Interface Anal.

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Heating (100) silicon at high temperature (say, higher than 850• C) in H 2 , cooling to 670-700 • C in the same ambient, and quenching to room temperature in N 2 results in environmentally robust, terraced 1 × 1 (100) SiH 2 . Evidence for this conclusion is based on angle-resolved x-ray photoelectron spectroscopy, atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, and reflection high-energy electron diffraction.

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“…12b) the 0.6 eV splitting typical of elemental silicon, and is due to the substrate contribution. [93] Nevertheless, the higher intensity Si2p component has the principal contribution at 101.7 eV that can be associated with a rare earth silicate phase. [91,94,95] The remaining component at 102.9 eV represents the SiO 2 underlying layer.…”

Section: Characterization Of Layers and Interfaces In Pr X O Y Filmsmentioning

confidence: 99%

An MOCVD Approach to High‐k Praseodymium‐Based Films

Nigro

Malandrino

Toro

et al. 2006

Chemical Vapor Deposition

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New high-k dielectric thin films have become of increasing interest over the last few years in the search for an alternative material to SiO 2 gate insulators in MOS devices. Lanthanide oxides have been studied as potential candidates for SiO 2 replacement. In this review, a description of the different CVD approaches to fabricating praseodymium oxide and silicate films with dielectric properties is presented. In particular, thermally activated and liquid-injection metal-organic (MO) CVD as well as atomic layer deposition (ALD), developed in recent years, are discussed. Examples highlighting the importance of different praseodymium precursors on the deposited phases are given. Special emphasis is placed upon deposition parameters crucial to obtain Pr 2 O 3 films and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium-containing films.

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The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. III. Initial conditions

Cited by 35 publications

References 21 publications

Density Control of Dodecamanganese Clusters Anchored on Silicon(100)

Density Control of Dodecamanganese Clusters Anchored on Silicon(100)

XPS, AFM, ATR and TPD evidence for terraced, dihydrogen terminated, 1×1 (100) silicon

An MOCVD Approach to High‐k Praseodymium‐Based Films

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