“…A detailed description of these techniques is given in (5 Figure 3 depicts such a p-type block with a thin skin of n-type, lowresistivity silicon obtained by diffusing antimony into the block. This procedure is a common one for the manufacture of semiconductor devices.…”
Section: Major Approaches To Small Circuitsmentioning
“…A detailed description of these techniques is given in (5 Figure 3 depicts such a p-type block with a thin skin of n-type, lowresistivity silicon obtained by diffusing antimony into the block. This procedure is a common one for the manufacture of semiconductor devices.…”
Section: Major Approaches To Small Circuitsmentioning
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