Integration of Circuit Functions into Solids

Herwald, S. W.; Angello, S. J.

doi:10.1126/science.132.3434.1127

Cited by 13 publications

(8 citation statements)

References 6 publications

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“…In 1960 Herwald and Angello published an article in Science stating that 'The trend in electronics circuit construction is toward microminiaturization and molecular electronics.' [1]. In this article they envisioned that 'the boundaries between materials and devices and between devices and circuits are being removed, and we shall see an integration of disciplines in the future development of molecular electronics.'…”

Section: Introductionmentioning

confidence: 99%

Electrical conduction through single molecules and self-assembled monolayers

Akkerman

Boer

2007

J. Phys.: Condens. Matter

363

514

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Section: Introductionmentioning

confidence: 99%

Electrical conduction through single molecules and self-assembled monolayers

Akkerman

Boer

2007

J. Phys.: Condens. Matter

363

514

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“…Organic molecules are particularly interesting as nanoscale device elements because of the ability (i) to manipulate their functional groups by synthesis to satisfy varying technological requirements and (ii) to achieve atomic-scale uniformity using a self-assembly process. Ultimately, organic molecules may provide new options and functionality for low cost devices. , …”

Section: Introductionmentioning

confidence: 99%

Copper−Metal Deposition on Self Assembled Monolayer for Making Top Contacts in Molecular Electronic Devices

et al. 2009

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Molecular electronics is an attractive option for low-cost devices because it involves highly uniform self-assembly of molecules with a variety of possible functional groups. However, the potential of molecular electronics can only be turned into practical applications if reliable contacts can be established without damaging the organic layer or contaminating its interfaces. Here, a method is described to prepare tightly packed carboxyl-terminated alkyl self-assembled monolayers (SAMs) that are covalently attached to silicon surfaces and to deposit thin metallic copper top contact electrodes without damage to this layer. This method is based on a two-step procedure for SAM preparation and the implementation of atomic layer deposition (ALD) using copper di-sec-butylacetamidinate [Cu(sBu-amd)](2). In situ and ex situ infrared spectroscopy (IRS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and electrical measurements are used to characterize the chemical modification of the Si/SAM interface, the perturbation of the SAM layer itself, and the metal homogeneity and interaction with the SAM headgroups. This work shows that (i) carboxyl-terminated alkyl monolayers can be prepared with the same high density and quality as those achieved for less versatile methyl-terminated alkyl monolayers, as evidenced by electrical properties that are not dominated by interface defects; (ii) Cu is deposited with ALD, forming a bidentate complexation between the Cu and the COOH groups during the first half cycle of the ALD reaction; and (iii) the Si/SAM interface remains chemically intact after metal deposition. The nondamaging thin Cu film deposited by ALD protects the SAM layer, making it possible to deposit a thicker metal top contact leading ultimately to a controlled preparation of molecular electronic devices.

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“…One-dimensional (1D) semiconducting nanostructures such as nanotubes and nanowires have attracted extensive attention because of their unique physical properties and potential applications. Therefore, the fabrication of nanotubular Ta 2 O 5 structures of high-aspect-ratio is expected to be promising for many applications. − That there is considerable interest in the field is indicated by recent reports on the fabrication of several forms of Ta 2 O 5 nanostructures such as nanoporous films, , nanodots, nanodimples, and hollow spheres . However, the electrochemical fabrication of either Ta 2 O 5 nanorod or nanotube arrays appears not yet to have been reported.…”

Section: Introductionmentioning

confidence: 99%

Self-Assembled Fabrication of Vertically Oriented Ta₂O₅ Nanotube Arrays, and Membranes Thereof, by One-Step Tantalum Anodization

2008

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We report for the first time synthesis of high-aspect-ratio tantalum oxide nanotube arrays via one-step anodization of Ta foil. The use of aqueous electrolytes containing HF:H 2 SO 4 in the volumetric ratios 1:9 and 2:8 results in formation of ordered nanodimpled surfaces with 40-55 nm pore diameters over the potential range 10-20 V. The addition of 5-10% of either ethylene glycol (EG) or dimethyl sulfoxide (DMSO) to the HF and H 2 SO 4 aqueous electrolytes resulted in the formation of Ta oxide nanotube arrays up to ∼20 µm thick, either securely anchored to the underlying Ta film or as robust free-standing membranes, as dependent upon the anodization time and applied voltage.

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Integration of Circuit Functions into Solids

Cited by 13 publications

References 6 publications

Electrical conduction through single molecules and self-assembled monolayers

Electrical conduction through single molecules and self-assembled monolayers

Copper−Metal Deposition on Self Assembled Monolayer for Making Top Contacts in Molecular Electronic Devices

Self-Assembled Fabrication of Vertically Oriented Ta₂O₅ Nanotube Arrays, and Membranes Thereof, by One-Step Tantalum Anodization

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Integration of Circuit Functions into Solids

Cited by 13 publications

References 6 publications

Electrical conduction through single molecules and self-assembled monolayers

Electrical conduction through single molecules and self-assembled monolayers

Copper−Metal Deposition on Self Assembled Monolayer for Making Top Contacts in Molecular Electronic Devices

Self-Assembled Fabrication of Vertically Oriented Ta2O5 Nanotube Arrays, and Membranes Thereof, by One-Step Tantalum Anodization

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Product

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Self-Assembled Fabrication of Vertically Oriented Ta₂O₅ Nanotube Arrays, and Membranes Thereof, by One-Step Tantalum Anodization