The dimensional crossover of quantum transport properties in few-layered Bi₂Se₃ thin films

Abstract

Topological insulator bismuth selenide (Bi2Se3) thin films with a thickness of 6.0 quintuple layers (QL) to 23 QL are deposited using pulsed laser deposition (PLD).

Omnipresence of Weak Antilocalization (WAL) in Bi2Se3 Thin Films: A Review on Its Origin

“…Typically, sheet carrier densities in the order of (one order of magnitude higher than in MBE-grown samples, indicating more defects) and mobilities in the range of are measured [ 34 , 53 ]. Under certain growth conditions, films nearly as good as the ones obtained in MBE with high mobilities close to and low carrier densities have been also reported [ 54 ]. Other reported growth methods are chemical vapor deposition (CVD) and magnetron sputtering (MS).…”

“…For specific applications, other substrates can be used instead of sapphire. For example, the dielectric properties of or make them ideal for gating purposes [ 44 , 54 ]. In films grown on ambipolar transport has been accomplished several times [ 12 , 32 ].…”

“…Red empty squares correspond to data obtained in our samples. The rest have been taken from literature: Red circles, [13]; blue square, [30]; light green upwards triangle, [31]; cyan left-pointing triangle, [42]; downwards magenta triangles, [54]; right pointing orange triangle, [56]; dark green hexagon, [64]; violet pentagon, [69]; maroon star, [70].…”

Self-Powered Bi2Se3/Si Position-Sensitive Detector and Its Performance Enhancement by Introducing a Si Nanopyramid Structure

“…Fortunately, the recent results demonstrate that the combination of Bi 2 Se 3 with traditional Si semiconductor arouses great concern because of its mature process, low price, and abundant properties, all of which play an important role in large-scale integrated devices. − Moreover, the helical characteristics of the Bi 2 Se 3 topological surface can effectively suppress electron backscattering and enhance carrier mobility, and an obvious exciton gain behavior can be obtained when combining with the Si material . Besides, Bi 2 Se 3 belongs to a triangular crystal system with a layered structure, in which the single molecular layer consists of five atomic layers of Se(1)–Bi–Se(2)–Bi–Se(1) bonded covalently with van der Waals forces between two layers with a layer spacing of about 1 nm, so that high-quality thin films can be easily deposited on the Si substrates by pulsed laser deposition (PLD), metal-organic chemical vapor deposition (MOCVD), and molecular beam epitaxy (MBE). − Based on these advantages, some researchers have begun to prepare Bi 2 Se 3 /Si heterostructure, intending to fully utilize their respective excellent properties to achieve a synergistic effect. However, the study of Bi 2 Se 3 /Si is still in its infancy, and the involved physical principles also lack a comprehensive and systematic exploration.…”

Morphology Optimization of Bi2Se3 Thin Films for Enhanced Thermoelectric Performance

“…At present, there have been many reports on the synthesis of low-dimensional Bi 2 Se 3 nanomaterials. − In comparison with other techniques, physical vapor deposition (PVD) can be used to prepare Bi 2 Se 3 nanomaterials on different substrates with a better crystallinity and a more controllable thickness . Among PVD techniques, vapor–solid growth (VSG) is more cost effective with higher synthesis efficiency in comparison to molecular beam epitaxy (MBE), which causes it to be widely used .…”