The dielectric function in zincblende semiconductors

Vinsome, P.K.W.; Richardson, D.J.

doi:10.1088/0022-3719/4/16/030

Cited by 88 publications

(14 citation statements)

References 14 publications

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“…i is often taken as 4.0. [23][24][25] For the Si-S system, the dipole moment was experimentally found to be 0.2 Debye for a monolayer coverage by Papageorgopoulos et al 26 Using these values, the barrier height change ͑⌬ B ͒ is ϳ0.13 eV for perfect one monolayer S coverage. Although the ultrahigh vacuum data from Papageorgopoulos may not be applicable to our solution-passivated samples and thus the exact value of barrier height change may be arguable, the key point is that the change in barrier height due to surface dipole is always unidirectional.…”

Section: ͑4͒mentioning

confidence: 99%

Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole

Ali¹,

Tao²

2007

Journal of Applied Physics

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Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n-and p-type Si͑100͒ substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy measurements. Due to the passivation of Si dangling bonds by S, surface states are reduced to a great extent and Schottky barriers formed by Al and Ni on Si͑100͒ substrates show greater sensitivity to their respective work functions. Aluminum, a low work function metal, shows a barrier height of Ͻ0.11 eV on S-passivated n-type Si͑100͒ and ϳ0.80 eV on S-passivated p-type Si͑100͒, as compared to 0.56 and ϳ0.66 eV for nonpassivated n-and p-type Si͑100͒, respectively. Nickel, a high work function metal, shows ϳ0.72 and ϳ0.51 eV on S-passivated n and p-type Si͑100͒, respectively, as compared to ϳ0.61 and ϳ0.54 eV on nonpassivated n and p-type Si͑100͒, respectively. Though a surface dipole forms due to the adsorption of S on Si͑100͒, our experimental results indicate that the effect of surface states is the dominant factor in controlling the Schottky barrier height in these metal-Si systems.

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Section: ͑4͒mentioning

confidence: 99%

Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole

Ali¹,

Tao²

2007

Journal of Applied Physics

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“…I n [13] the following formula for the qand w-dependent screening func-'1 r Table 3. We have compared our screening function with the results of pseudopotential calculations [22] and reflectance measurements [26, 271 as shown in Fig. 2 and 3, respectively.…”

Section: Scteening Functionmentioning

confidence: 99%

“…Static electronic dielectric constant E,,[22], bulk plasma frequency wp [23, 241, and lattice constant a[25]. The experimental value for wp from energy loss measurements has been corrected by the factor 1to get the correct maximum position of the energy loss function derived from our screening function (6)…”

mentioning

confidence: 99%

Electronic polarization (relaxation) effects in the core level spectra of semiconductors II. Application to Ga3d and Si2p levels

Bechstedt

Enderlein

1979

Physica Status Solidi (b)

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Core electron binding energies of semiconductors are strongly influenced by core hole polarization (relaxation) effects. Polarization energies are calculated for the Ga3d hole in Ga-V semiconductors and the Si2p hole in Xi. The values range between 4 and 7 eV. From the polarization energies, atomic core level energies, and solid state core level shifts theoretical values for the core electron binding energies are derived. Good agreement with experimental results is obtained. Rumpfniveau-Bindungsenergien von Halbleitern werden sehr stark durch Rumpfloch-Polarisations-(Relaxations-) Effekte beeinflufit. I n dieser Arbeit werden Polarisationsenergien fur dasGa3d-Loch in Ga-V Halbleitern und das Si2p-Loch in Si berechnet. Die Werte liegen zwischen 4 und 7 eV. Aus den Polarisationsenergien, den atomaren Energieniveaus und ihrer Verschiebung im Festkorper werden theoretische Werte fur Rumpfelektron-Bindungsenergien abgeleitet. Die ubereinstimmung mit experimentellen Ergebnissen ist gut.

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“…The present work is a theoretical study of the effect of confinement geometry and spatial variation of dielectric screening on the acceptor binding energy in Quantum wire using Variational technique. This investigation involves the dielectric screening function ε 2 by Hermanson et.al (8) and ε 3 given by Richardson and Vinsome (9) using band structure information about GaAs. The results are compared with the results without screening in QWW.…”

Section: Introductionmentioning

confidence: 99%

Effect of geometry on the screened acceptor binding energy in a quantum wire

Shanthi

Nithiananthi

2014

AIP Conference Proceedings

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Polaronic and magnetic field effects on the binding energy of an exciton in a quantum well wire Effect of geometrical shape in the cross section of quantum wires on exciton binding energy Abstract. The effect of various Geometries G(x, y) of the GaAs/Al x Ga 1-x As Quantum wire like G 1 : (L, L) G 2 : (L, L/2) G 3 : (L/2, L/4) on the binding energy of an on-center acceptor impurity has been investigated through effective mass approximation using variational technique. The observations were made including the effect of spatial dependent dielectric screening for different concentration of Al, at T=300K. The influence of spatial dielectric screening on different geometries of the wire has been compared and hence the behavior of the acceptor impurity in GaAs/Al x Ga 1-x As Quantum wire has been discussed.

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The dielectric function in zincblende semiconductors

Cited by 88 publications

References 14 publications

Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole

Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole

Electronic polarization (relaxation) effects in the core level spectra of semiconductors II. Application to Ga3d and Si2p levels

Effect of geometry on the screened acceptor binding energy in a quantum wire

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