The development of a high-rate technology for wide-bandgap photosensitive a-SiC:H alloys

Microstructure analysis of a-SiC:H thin films grown by high-growth-rate PECVD

“…roughness of about 3 nm measured by Atomic Force Microscopy, indicating that the ion bombardment enhancement induced by the coupling of the HF bias does not induce an island morphology as in Ref. [7]. Fig.…”

“…Actually, very high frequency (VHF) can reduce the ion bombardment and increase the electron density, allowing the growth of low defect films with carbon ratio up to 0.63; however, the deposition rate is still low (few Å /s). On the other side, the use of 55 kHz (Low Frequency-LF) plasma assisted systems leads to higher deposition rates (up to 10 Å /s), but the thin film morphology is rather poor [7].…”