2022
DOI: 10.15251/djnb.2022.174.1453
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The determination of urbach energy and optical gap energy by many methods for Zn doped NiO thin films fabricant semiconductor by spray pyrolysis

Abstract: The effect of Zn doping on optical, structural and electrical properties of Ni1-xZnxO thin films has been successfully deposited on glass substrate by Spray Pyrolysis technique. The main objective of this research is to study the Ni1-xZnxO thin films to determine the optical gap energy by various methods and compare it with calculated values. The transmission spectra shows that the Ni1-xZnxO thin films have a good optical transparency in the visible region. The optical gap energy varied between 3.50 and 3.75 e… Show more

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Cited by 8 publications
(8 citation statements)
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“…It turned out that the occurrence of shift even during extremely high doping is related to the non‐covalent effect of the dopant on the base material. The red shift and blue shift of the absorbance band were evaluated by determination of Urbach energy ( E U ) [33, 34] and Burstein–Moss effect [35], respectively. The Burstein–Moss effect mainly occurs with a blue shift of the band gap in semiconductors doped with high amounts of metals.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…It turned out that the occurrence of shift even during extremely high doping is related to the non‐covalent effect of the dopant on the base material. The red shift and blue shift of the absorbance band were evaluated by determination of Urbach energy ( E U ) [33, 34] and Burstein–Moss effect [35], respectively. The Burstein–Moss effect mainly occurs with a blue shift of the band gap in semiconductors doped with high amounts of metals.…”
Section: Resultsmentioning
confidence: 99%
“…The red shift and blue shift of the absorbance band were evaluated by determination of Urbach energy (E U ) [33,34] and Burstein-Moss effect [35], respectively. The Burstein-Moss effect mainly occurs with a blue shift of the band gap in semiconductors doped with high amounts of metals.…”
Section: Scherrer's Methodsmentioning
confidence: 99%
“…The latter comes from the Ag + donor ions in the substitutional sites of Ni +2 and the formation of the molecular NiAg2O existed on the surface. The increase in the conductivity of deposited films after 4 at.% can be related to the increase of the potential barriers, because the introduced atoms are segregated into the grain boundaries [38][39] . The Ni0.96Ag0.04O thin films have best electrical properties.…”
Section: Electrical Properties Of Ni1-xagxo Thin Filmsmentioning
confidence: 99%
“…The residual stress (ε hkl ) and the dislocation density (δ hkl ) in the layer were evaluated using the following formulae [16]:…”
Section: X-ray Diffractionmentioning
confidence: 99%