Study the Effect of Ni Doping on Structural, Optical and Electrical Properties of Ni1-xAgxO Thin Films Deposited by Spray Pyrolysis Technique

Abstract

The effect of Ag doping on optical, structural and electrical properties of deposited Ni1-xAgxO thin films on glass substrate by spray pyrolysis technique has been studied. The main objective of this research is to study the change of the physical and optical properties of Ni1-xAgxO thin films that are fabricant to semiconductor with different doping levels x. These levels are 0 at.%, 2 at.%, 4 at.%, 8 at.% and 10 at.%. The transmission spectra show that the Ni1-xAgxO thin films have a good optical transparency in the visible region from 68 to 83%. The optical gap energy of the Ni1-xAgxO thin films varied between 3.70 and 3.81 eV. The urbach energy varied between 245 and 289 meV. However, the Ni0.96Zn0.04O thin films have many defects with maximum value of urbach energy. The Ni0.96Ag0.04O thin films have minimum value of optical gap energy. The Ni0.96Ag0.04O thin films have maximum value of the electrical conductivity which is 0.023 (Ω.cm)-1. The Ni0.92Ag0.08O thin films have maximum value of the transmission which is 83%. The average electrical conductivity of our films is about (0.0184 (Ω.cm)-1). XRD patterns of the Ni1-xAgxO thin films indicate that films are polycrystalline with cubic structure.