The determination of interface states and series resistance profile of Al/polymer/PEDOT-PSS/ITO heterojunction diode by I–V and C–V methods

Şahıngöz, Recep; Kanbur, H.; Voigt, Monika; Soykan, Cengiz

doi:10.1016/j.synthmet.2008.04.023

Cited by 76 publications

(32 citation statements)

References 24 publications

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“…As can be seen in the figure, the forward bias current plot reveals three distinct regions: a linear region below ''0.22 V'', an excess current or ''hump'' at about ''0.22 V''-''0.82 V'', and a deviation from the ln(I) vs. V relationship above ''0.82 V''. Similar results have been reported in the literature [24][25][26][27]. Also, the nonsaturation behavior was observed (Fig.…”

Section: (V) I (A)supporting

confidence: 92%

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Demirezen

Altındal

Özçelik

et al. 2011

Microelectronics Reliability

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a b s t r a c tIn order to explain the experimental effect of interface states (N ss ) and series resistance (R s ) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/x-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (À5 V)-(+5 V), respectively. The voltage dependent R s profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (r ac ) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C m ) and conductance (G m /x) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of N ss and R s is confirmed to have significant effect on non-ideal I-V, C-V and G/x-V characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures.

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Section: (V) I (A)supporting

confidence: 92%

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Demirezen

Altındal

Özçelik

et al. 2011

Microelectronics Reliability

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“…In recent years, metal/metal doped polymer/semiconductor (MPS) structures, which are known as MPS type Schottky barrier diodes (SBDs), have gained great importance due to their potential applications in the microelectric industry, instead of classic metal/ semiconductor (MS) and metal/insulator/semiconductor (MIS) type SBDs [1][2][3][4][5][6][7][8][9][10][11][12]. MS type SBDs, with a thin interfacial polymer layer, such as polyaniline, poly(alkylthiophene), polypyrrole, polythiophene, poly(3-hexylthiophene) and polyvinyl alcohol (PVA), have been investigated by chemists, physicists, and electrical engineers, as well due to potential applications and interesting properties of these polymers.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Alialy¹,

Tecimer²,

Uslu³

et al. 2017

J Nanomed Nanotechnol

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In order to see the effect of Bi-doped PVA interfacial layer on electrical characteristics, both Au/n-Si (MS) and Au/Bidoped PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) were fabricated, and their main electrical parameters were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements, in dark and under illumination at room temperature. Forward bias semi-logarithmic I-V plots of these SBDs show two distinct linear regions, with different slopes in the low and intermediate voltage region. Such behavior in I-V plots was explained by two parallel diodes model. Experimental results show that the ideality factor (n), barrier height (φ b ), series and shunt resistances (R s and R sh ), and the density of interface states/traps (N ss ) are strong functions of illumination level and applied bias voltage. The R s values were determined from the I-V characteristics, by using both Ohm's law. The energy distribution profile of N ss was also obtained from the forward bias I-V characteristics, by taking into account voltage dependent barrier height (φ e ) and ideality factor (n). It was found that Bi-doped PVA layer lead to a considerable decrease in the leakage current, R s and N ss and increase in R sh and rectifier rate (RR=I F /I R ). In conclusion, a thin Bi-doped PVA interfacial layer, considerably improved the diode performance, both in dark and under illumination.account voltage dependent barrier height (φ B (V)) and ideality factor n(V). Experimental results show that the Bi-doped interfacial PVA layer led to considerable decrease in the leakage current, R s and N ss and led to increase in R sh and rectifier rate (RR=I F /I R ). So, it can be said that Bi-doped PVA considerably improved the performance of SBD. Experimental ProcedureFor the fabrication of Au/PVA (Bi-doped)/n-Si (MPS), (phosphor doped) single crystal silicon with surface orientation, 350 μm thickness and 0.7 Ω.cm resistivity was used. Si wafer was degreased in organic solution of peroxide-ammoniac solution in 10 minutes, and then etched in a sequence of H 2 O+HCl solution, and finally quenched in de-ionized water resistivity of 18 MΩ.cm for a prolonged time. Preceding each cleaning step, the wafer was rinsed thoroughly in de-ionized water. Immediately after surface cleaning, high purity (99.999%) gold (Au), with a thickness of ~2000Å, was thermally evaporated onto the whole back side of Si wafer, in a pressure about 10 -6 Torr in high vacuum metal evaporation system. In order to perform a low resistivity ohmic back metal contact, n-Si wafer was sintered at about 450°C for 5 min in N 2 atmosphere.Immediately after the formation of ohmic contact, 0.5 g of bismuth acetate was mixed with 50 g of polyvinyl Alcohol (PVA), molecular Citation: Alialy S, Tecimer H, Uslu H, Altındal Ş (2013) A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA

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“…6b (linear intermediate bias regions) and Eqs. (3,4,5). The I o , n, U Bo values were found to be 1.22 9 10 -6 A, 4.55 and 0.69 eV respectively ( Table 1).…”

Section: Resultsmentioning

confidence: 88%

“…There are various models such as Schottky, Poole-Frenkel and space charge limited-conduction (SCLC) mechanisms etc. to explain charge transport mechanisms in various voltage regions [3,[26][27][28]. The variation of current with applied bias voltage as given as IaV m .…”

Section: Resultsmentioning

confidence: 99%

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Electrical characterization of Al/PTF/PEDOT:PSS/ITO heterojunction structure

Çavuş

2015

J Mater Sci: Mater Electron

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We have investigated electrical properties of Al/PTF/PEDOT:PSS/ITO heterojunction structure at room temperature. Firstly, optical properties of the polymer [poly(pentachlorophenyl methacrylate)] were determined from ultraviolet-visible absorption spectra in the wavelength range of 200 to 700 nm. Optical band gap (E g ) of the polymer was found about 4.70 eV. Secondly, the PED-OT:PSS and polymer thin film (PTF) were prepared on the ITO substrate. The current transport mechanism and electrical parameters of Al/PTF/PEDOT:PSS/ITO heterojunction structure were investigated using current-voltage (I-V) characteristics.

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The determination of interface states and series resistance profile of Al/polymer/PEDOT-PSS/ITO heterojunction diode by I–V and C–V methods

Cited by 76 publications

References 24 publications

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Electrical characterization of Al/PTF/PEDOT:PSS/ITO heterojunction structure

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