We present a cryogenic CMOS circuit with signif icant performance improvements compared to previously pro posed single-shot Single Electron Transistor readout circuit. The new readout architecture developed on commercial O.5J.tm SOl CMOS process is desinged to operate at 4.2K temperature and detect the SET signal current as low as 200pA. In addition to very low signal levels, the design process is complicated due to severe power consumption limitations at low temperature and J.tV level drain-source compliance requirement of the SET. The design addresses the low-temperature CMOS irregularities found in published literature and even under the design restrictions andSET specifications, our circuit shows successful digital detection of a SET event with only'" 520ns delay and consumes as low as 761' W power. In addition to speed improvement over previous design (detection time more than l0J.ts), this design is more robust and tolerant to biasing variations.