The deposition of silicon from silane in a low-pressure hot-wall system

Claassen, W. A. P.; Bloem, J.; Valkenburg, W. G. J. N.; Brekel, C.H.J. Van Den

doi:10.1016/0022-0248(82)90481-x

Cited by 89 publications

(57 citation statements)

References 4 publications

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“…[1][2][3][4][5] In our recent study of CVD Si at 600-750°C and 20-80 Torr in a lamp-heated single-wafer reactor, 5 the apparent activation energy for epi-Si is 2.1 eV and that for poly-Si 1.6 eV, in agreement with earlier published results. 1,3,6 Under these deposition conditions, first-order reaction kinetics was found for the ͑average͒ growth rate of epi-Si as well as for poly-Si with respect to the partial pressures of SiH 4 . However, the ͑average͒ growth rate depended more strongly on the partial pressure of H 2 for epi-Si compared to poly-Si.…”

supporting

confidence: 80%

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Pejnefors¹,

Zhang²,

Radamsson³

et al. 2001

Electrochem. Solid-State Lett.

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Chemical vapor deposition of Si in a lamp-heated single-wafer reactor is studied by monitoring the growth rate of films deposited on bare Si, silicon-on-insulator ͑SOI͒, and oxidized Si wafers. The growth rate is consistently higher for deposition of polycrystalline Si than for epitaxy of Si, due to different kinetics dictating the two depositions. Epitaxy of Si on SOI shows a higher overall growth rate than on bare Si. Likewise, deposition of polycrystalline Si on oxidized Si wafer with a 4000 Å thick oxide has a higher growth rate than on that with 15 Å oxide. These are attributed to surface emissivity variation during Si deposition. The difference in kinetics plays a more dominant role than the surface emissivity variation in affecting the growth rate for the depositions studied.Chemical vapor deposition ͑CVD͒ of epitaxial Si ͑epi-Si͒ and that of polycrystalline Si ͑poly-Si͒ are characterized with different apparent activation energies in the surface reaction limited regime. 1-5 In our recent study of CVD Si at 600-750°C and 20-80 Torr in a lamp-heated single-wafer reactor, 5 the apparent activation energy for epi-Si is 2.1 eV and that for poly-Si 1.6 eV, in agreement with earlier published results. 1,3,6 Under these deposition conditions, first-order reaction kinetics was found for the ͑average͒ growth rate of epi-Si as well as for poly-Si with respect to the partial pressures of SiH 4 . However, the ͑average͒ growth rate depended more strongly on the partial pressure of H 2 for epi-Si compared to poly-Si. These differences in growth kinetics were attributed to a higher H surface coverage for epi-Si than for poly-Si. Hence the growth rate of epi-Si is limited by H 2 desorption whereas the growth rate of poly-Si is limited by the balance between the SiH 4 adsorption and the H 2 desorption. 5 As a result, an appreciable difference in thickness of the two types of Si layers is observed under identical deposition conditions. 5 Since the susceptor for bedding the Si wafer is heated by lamp radiation, variation of wafer surface emissivity during Si deposition leading to wafer temperature alternation could also result in different growth rates for epi-Si on bare Si substrates and poly-Si on oxidized Si wafers. [7][8][9] The purpose of the present study is to identify the dominant effect on growth rate, i.e., deposition kinetics vs. wafer surface emissivity.The single-wafer reactor used in this study was a commercial ASM Epsilon-2000 system whose cross section is shown schematically in Fig. 1. The whole graphite susceptor of 240 ϫ 280 mm size is coated with SiC to prevent contamination. It is heated by two tungsten-halogen lamp-banks above and below together with four lamps ͑not shown͒ located under the susceptor and centered around the rotating axis. A part of the susceptor is set to rotation to improve thickness uniformity over a wafer. The susceptor temperature is measured with three thermocouples placed in the surrounding fixed part ͑front, rear, and side͒ and one encapsulated in the middle of the rotating part. ...

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supporting

confidence: 80%

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Pejnefors¹,

Zhang²,

Radamsson³

et al. 2001

Electrochem. Solid-State Lett.

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“…1-5, the deposition kinetics for Si growth is studied. Several publications were found in the literature about the deposition kinetics of epitaxial 15,28-33 and polycrystalline 28,29,31,32,[34][35][36][37][38][39][40] Si film growth from silane performed at deposition pressure ranging from ultrahigh vacuum ͑UHV͒ to atmospheric pressure. Two reaction paths describing the Si growth are homogeneous and heterogeneous decomposition of silane and Si hydrides.…”

Section: Growth Kineticsmentioning

confidence: 99%

Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

Pejnefors

Zhang

Radamson

et al. 2000

Journal of Applied Physics

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“…16) Because the particles diffuse less rapidly than the monomers SiH4 and SiH2 in the gas phase, they cannot readily move into the narrow spaces between wafers in a low-pressure reactor. Consequently, their incorporation into the depositing silicon layer in parallel with deposition from the monomers tends to degrade the thickness uniformity, as well as the film quality.…”

Section: Homogeneous Decompositionmentioning

confidence: 99%