The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode

Abstract

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates

“…In this study, a hollow cathode sputtering system is used to provide the carbon source. This system, described in detail elsewhere [9] and used to deposit highly ordered 3C-SiC films on Si substrates without carbonized buffer layers [10,11], simultaneously houses a C target for the carbonization layer and a SiC target for the main SiC thin film growth. The carbonization procedure followed the same well-controlled temperature process used by Yoshinobu et.…”