Influence of deposition conditions on the thermal stability of ZnO:Al films grown by rf magnetron sputtering Iron films deposited by direct current magnetron sputtering onto glass substrates were converted into FeS 2 films by thermal sulfurization. Experiments were carried out to optimize the sulfurization process, and the formation of FeS 2 thin films was investigated under different annealing temperatures and times. High quality FeS 2 films were fabricated using this process, and single phase pyrite films were obtained after sulfurization in a sulfur and nitrogen atmosphere at 450°C for 1 h. Film crystallinity and phase identification were determined by using x-ray diffraction. The cubic phase pyrite films prepared were p-type, and scanning electron microscopy studies exhibited a homogeneous surface of pyrite. The authors have found that the best Ohmic contact for their pyrite thin films, using inexpensive metals, was Ni. The following were chosen for the study: Al, Mo, Fe, and Ni, and the one that led to the lowest resistance, 333 ⍀, was Ni.

Part of the Electrical and Computer Engineering CommonsOlejníček, J.; Kamler, Chad A.; Mirasano, A.; Martinez-Skinner, A. L.; Ingersoll, M. A.; Exstrom, C. L.; Darveau, S. A.; Huguenin-Love, J. L.; Diaz, M.; Ianno, Natale J.; and Soukup, Rodney J., "A non-vacuum process for preparing nanocrystalline CuIn 1−x Ga x Se 2 materials involving an open-air solvothermal reaction" (Abstract A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn 1−x Ga x Se 2 (x = 0, 0.25, 0.5, 0.75, 1) materials.An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diameters ranging between 20 and 40 nm. Raman spectroscopy and X-ray diffraction (XRD) confirm that indium/gallium ratio control is possible over a wide range. The solvothermal reaction step yields a mixture of chalcopyrite and Cu 2−x Se. This is converted to pure chalcopyrite product by annealing at 500 °C.

No abstract

The paper presents a simple theoretical model of the breakdown of the supersonic plasma jet generated by the hollow cathode discharge inside the nozzle in the low pressure RF plasma-chemical reactor. Through the nozzle which is drilled in the R F electrode the working gas flows to the reactor chamber. If at the outlet of the nozzle the gas flow is supersonic the well defined plasma jet is created inside the reactor chamber. The results of our model are in qualitative agreement with experimental data.

We present results of the experimental study of the gas flow in the RF low-pressure supersonic-jet plasma-chemical reactor. The flow is investigated by using photography with subsequent digital picture processing. The results of the investigations yield valuable data for the physical model of the plasma-jet system.