The dawn of Ga2O3 HEMTs for high power electronics - A review

Singh, Rajan; Lenka, Trupti Ranjan; Panda, Deepak Kumar; Velpula, Ravi Teja; Jain, Barsha; Bui, Ha Quoc Thang; Nguyen, Hieu Pham Trung

doi:10.1016/j.mssp.2020.105216

Cited by 112 publications

(31 citation statements)

References 114 publications

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“…Many published review papers regarding β-Ga 2 O 3 single crystals in the literature are roughly categorized as follows: 1) growth and material properties of bulk β-Ga 2 O 3 [168,169,[176][177][178][179][180][181], bulk β-Ga 2 O 3 -based power/photonic devices [8,9,[182][183][184][185] and their combination [1,[186][187][188][189][190].…”

Section: Discussionmentioning

confidence: 99%

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Kim

2021

SN Appl. Sci.

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Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-quality β-Ga2O3 and high performance β-Ga2O3 based devices. However, rapid advance in device performance can be limited by the critical issues of metal contacts to β-Ga2O3 such as barrier height, leakage current, ohmic contact, and surface, interfacial and deep states. This article aims to provide a review on the recent studies in the control and understanding of metal contacts to β-Ga2O3, particularly in terms of the barrier formation. This review suggests that understanding the current transport mechanisms of metal contacts to β-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of β-Ga2O3 based devices.

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Section: Discussionmentioning

confidence: 99%

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Kim

2021

SN Appl. Sci.

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“…cation densities, providing high-quality epitaxial layers [10,11]. Recently, β-Ga2O3 power devices have been demonstrated with encouraging performance such as high breakdown voltages, high critical electric fields, high currents, and excellent thermal stability [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…However, due to the lack of p-type β-Ga2O3, most of the demonstrated β-Ga2O3 devices are unipolar devices such as high electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) [14,19,20]. This is because effective p-type doping is still challenging in β-Ga2O3 due to two obstacles.…”

Section: Introductionmentioning

confidence: 99%

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Mudiyanselage

Wang

2022

IEEE J. Electron Devices Soc.

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Breakdown capability of β-Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With 5 μm β-Ga2O3 drift layer, the ideal breakdown voltage (BV) of the heterojunction was 1.37 kV, while the BV of the reference device without effective mesa edge termination decreased dramatically to 300 V due to the electric field crowding at the device edge. Four mesa ET structures were investigated to mitigate the electric field crowding at the junction edge, including beveled mesa, step mesa, deeply etched mesa, and p-doped guard ring. Without effective ET, the peak electric field at the junction edge was ~ 4.2 MV/cm at −300 V. By incorporating these ET techniques, the peak electric fields were reduced significantly to 0.73 MV/cm. Ideal BV of 1.37 kV was achievable using deeply etched mesa and guard ring ETs. The beveled mesa realized >80% of the ideal BV, while step mesa ET was less effective in alleviating the electric field crowding and only offered ~ 40% of the ideal BV. The device BV can be further scaled by varying β-Ga2O3 drift layer thickness. This work can serve as an important reference and guideline for developing high power high voltage β-Ga2O3 based bipolar power devices.

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“…Despite challenges on the front of high-quality native substrates, GaN-based HEMTs have been in use for over a decade and probably surpassed their life-cycle, for various reasons [1]. Currently, gallium-oxide (Ga2O3) is being thoroughly explored for its possible applications in certain areas of power electronics due to its interesting material properties such as large bandgap (4.5 -5.3 eV), estimated high critical field (8 MV/cm), a wide variety of n-type dopants with controllable doping, and availability of single-crystal substrate grown using melt-based systems [2]- [4]. Out of its five crystalline structures, the β-phase of Ga2O3 has been reported as the most stable and looks most suited to high-voltage applications.…”

Section: Introductionmentioning

confidence: 99%

T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

Singh¹,

Lenka²,

Nguyen³

2021

Preprint

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In this paper, we report record DC and RF performance in β-Ga2O3 High Electron Mobility Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T gate with head-length LHL of 180 nm and foot-length LFL of 120 nm is used in the highly scaled device with an aspect ratio (LG/tbarrier) of ~ 5. The proposed device takes advantage of a highly polarized Aluminum Nitride (AlN) barrier layer to achieve high Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 × 1013 cm-2, due to spontaneous as well as piezoelectric polarization components. In the depletion mode operation, maximum drain current ID,MAX of 1.32 A/mm, and relatively flat transconductance characteristics with a maximum value of 0.32 S/mm are measured. The device with source-drain distance LSD of 1.9 µm exhibits record low specific-on resistance RON,sp of 0.136 mΩ-cm–2, and off-state breakdown voltage of 403 V, which correspond to the record power figure-of-merit (PFoM) of ~ 1194 MW/cm2. Additionally, current gain cut-off frequency fT and maximum oscillation frequency fMAX of 48 and 142 GHz are estimated. The obtained results show the potential of Ga2O3 HEMT for futuristic power devices.

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The dawn of Ga2O3 HEMTs for high power electronics - A review

Cited by 112 publications

References 114 publications

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

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