The Damage Equivalence of Electrons, Protons, and Gamma Rays in MOS Devices

Brucker, G. J.; Stassinopoulos, E. G.; Gunten, O. Van; August, L. S.; Jordan, Thomas

doi:10.1109/tns.1982.4336479

Cited by 36 publications

(3 citation statements)

References 5 publications

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“…The agreement between the experimental surface-to-average dose ratios, the theoretical values, and the experimental ratios from the TLD comparisons (see Table la and lb) provided confidence in the dosimetry of the damage equivalence experiment of reference (5). Corrections to the electron damage sensitivities, AVTN/DOSE, were based on the experimental TLD comparisons.…”

Section: Dosimetrymentioning

confidence: 60%

Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and Sources

Stassinopoulos¹,

Brucker²,

Gunten³

et al. 1983

IEEE Trans. Nucl. Sci.

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ResultsThis paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels, or activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

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Section: Dosimetrymentioning

confidence: 60%

Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and Sources

Stassinopoulos¹,

Brucker²,

Gunten³

et al. 1983

IEEE Trans. Nucl. Sci.

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“…The majority of the Earth observation satellites, including passive atmospheric gas sensors (ENVISAT, OCO-2, GOSAT), are launched in the low Earth close to polar orbits (altitude of 100 −1000 km) where the expected radiation dose is much lower, about 2 krad/year for 2-mm-thick Al shielding [37]. Although the components in orbit are primarily exposed to energetic electron and proton radiation, it has been shown that gamma radiation exposure emitted by 60 Co sources, with photon energies of 1.17 MeV and 1.33 MeV, produces very similar radiation damage effects at equivalent doses [38]. Therefore gamma rays are suitable and a much lower-cost proxy for evaluating radiation hardness of the components.…”

Section: Methodsmentioning

confidence: 99%

Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO_4 and Rb:KTiOPO_4

Coetzee¹,

Duzellier²,

Dherbecourt³

et al. 2017

Opt. Mater. Express

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Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO4 and Rb:KTiOPO4. Express, Access to the published version may require subscription. N.B. When citing this work, cite the original published paper. Optical Materials Abstract:We investigate the effect of gamma radiation on flux grown KTiOPO 4 and Rb:KTiOPO 4 samples, as well as their periodically poled variants. Specifically, we study the altered transmission due to color-center formation via gamma irradiation. We measured the transmission of our samples for varying radiation doses and demonstrate effective temperature annealing of gamma radiation induced color centers. We measured a maximum transmission difference of 2% in our samples, which was easily corrected with temperature annealing. No long term and permanent changes were found to be induced in our samples.

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“…Following this, the quest for space explorations and satellite development put the focus on the implementation of another type of radiation sensor, namely the particle detector to identify the radiation induced faults in electronic systems. Over the course of time, the increased understanding of radiation interactions [10,11] and energy deposition processes have helped to extend the sensors with improved response coupled with new design techniques [12][13][14][15] . From the early 1980s, the theory of microdosimetry [16,17], particularly dealing with very low dose-level effects on microelectronics, was explored and studied with an emphasis on radiation oncology applications [18].…”

Section: Introductionmentioning

confidence: 99%

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

et al. 2021

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This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.) is essential in several critical reliability applications such as medical, aviation, space missions and high energy physics experiments considering safety and quality assurance. In the last few decades, numerous techniques based on semiconductor devices such as diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs) and solid-state photomultipliers (SSPMs), etc., have been reported to estimate the absorbed dose of radiation with sensitivity varying by several orders of magnitude from μGy to MGy. In addition, the mitigation of soft errors in integrated circuits essentially requires detection of charged particle induced transients and digital bit-flips in storage elements. Depending on the particle energies, flux and the application requirements, several sensing solutions such as diodes, static random access memory (SRAM) and NAND flash, etc., are reported in the literature. This article goes through the evolution of radiation dosimeters and particle detectors implemented using semiconductor technologies and summarises the features with emphasis on their underlying principles and applications. In addition, this article performs a comparison of the different methodologies while mentioning their advantages and limitations.

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The Damage Equivalence of Electrons, Protons, and Gamma Rays in MOS Devices

Cited by 36 publications

References 5 publications

Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and Sources

Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and Sources

Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO_4 and Rb:KTiOPO_4

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

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