The crystallization of amorphous ZrO2 by thermal heating and by ion bombardment

Naguib, Hala F.; Kelly, Roger

doi:10.1016/0022-3115(70)90213-8

Cited by 53 publications

(28 citation statements)

References 18 publications

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“…Most significant is the fact that a cubic/tetragonal phase of ZrO 2 can be stabilised by annealing at T 6 773 K, a temperature at which Ar is still embedded within the lattice. Similar effects might have produced the structural modifications reported for pure and doped ZrO 2 bulk [16,17] and thin films and other materials subjected to Ar þ bombardment during or after preparation. The comparison of the structural evolution of O sibility of systematically using noble gas ''doping'' as a way of controlling the structure and texture development of thin film materials.…”

Section: Discussionmentioning

confidence: 91%

“…Previous papers in literature on the effect of ion bombardment in ZrO 2 bulk [17] and thin film [16] materials have reported about monoclinic-cubic/tetragonal phase transformation or crystallisation processes from an amorphous state when this material is bombarded with energetic Ar beams. However, in these papers, although implantation of Ar þ ions within the network is implicitly assumed, a precise study about the fate of these implanted ions and/or their influence on the crystallographic transformations is missing.…”

Section: Discussionmentioning

confidence: 99%

“…Martin [16] has shown that monoclinic to tetragonal phase transformations can be induced in ZrO 2 thin films by bombardment with Ar þ ions of relatively low energy. For bulk ZrO 2 the effect of high-energy Ar þ bombardment in inducing crystallographic transformations and the stabilisation of the cubic/ tetragonal phase is well known [17]. In most cases an implicit explanation of this type of monoclinic to cubic/tetragonal transformation relies on the assumption that ballistic interactions between the energetic ions and the target atoms are responsible for the phase change.…”

Section: Introductionmentioning

confidence: 99%

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Structural effects due to the incorporation of Ar atoms in the lattice of ZrO2 thin films prepared by ion beam assisted deposition

Holgado¹,

Galindo²,

Veen³

et al. 2002

Nuclear Instruments and Methods in Physics Research Section B:

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Two sets of ZrO 2 thin films have been prepared at room temperature by ion beam induced chemical vapour deposition and subsequently annealed up to 1323 K. The two sets of samples have been prepared by using either O þ 2 or mixtures of (O þ 2 þ Ar þ ) ions for the decomposition of a volatile metallorganic precursor of zirconium. The structure and microstructure of these two sets of samples have been determined by means of X-ray diffraction, Fourier transform infrared spectroscopy and positron beam analysis (PBA). The samples were very compact and dense and had a very low-surface roughness. After annealing in air at T P 573 K both sets of films were transparent and showed similar refraction indexes.For the (O þ 2 þ Ar þ )-ZrO 2 thin films it is shown by X-ray photoelectron spectroscopy and Rutherford back scattering that a certain amount of incorporated Ar (5-6 at.%) remains incorporated within the oxide lattice. No changes were detected in the amount of incorporated Ar even after annealing at T ¼ 773 K. For higher annealing temperatures (T > 1073 K), the amount of Ar starts to decrease, and at T ¼ 1223 K only residual amounts of Ar (<0.4%) remain within the lattice. It has been found that as far as Ar atoms remain incorporated within the ZrO 2 network, the (O þ 2 -Ar þ )-ZrO 2 films present a cubic/tetragonal phase. When the amount of ''embedded'' Ar decreases, the crystalline phase reverts to monoclinic, the majority phase observed for the (O The incorporation of Ar within the ZrO 2 thin film structure, is proposed as the main factor contributing to the stabilisation of the cubic/tetragonal phase of ZrO 2 at room temperature.

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Section: Discussionmentioning

confidence: 91%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural effects due to the incorporation of Ar atoms in the lattice of ZrO2 thin films prepared by ion beam assisted deposition

Holgado¹,

Galindo²,

Veen³

et al. 2002

Nuclear Instruments and Methods in Physics Research Section B:

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“…They reported that amorphous ZrO 2 was crystallized by ion sputtering [1,2]. On the other hand, changes in the XPS spectra of ZrO 2 caused by preferential sputtering of oxygen were shown by Holm et al [3] and Hofmann et al [4,5].…”

Section: Introductionmentioning

confidence: 95%

Changes in X-ray photoelectron spectra of yttria-tetragonal zirconia polycrystal by ion sputtering

Watanabe

Yoshinari

2016

Appl. Phys. A

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This paper reports changes in X-ray photoelectron spectroscopy spectra of yttria-tetragonal zirconia polycrystal (Y-TZP) brought about by Ar ion sputtering. The changes in the core-level spectra of Y-TZP suggest that preferential sputtering of oxygen occurred. A new peak was observed near 0 eV binding energy accompanied with changes in the corelevel spectra by the sputtering. After 18 h in a high vacuum following the sputtering, the spectra changed by the sputtering were returned to their original shapes. In contrast, the color of Y-TZP was changed from white to pale brown by X-ray irradiation and was changed from pale brown to dark gray by ion sputtering. However, when the new peak near 0 eV decreased after 18 h, no color change was observed. Therefore, it is thought that the new peak was mainly derived from electrons trapped in various kinds of oxygen vacancies created by the sputtering in other than color centers.

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“…The oxide has three major polymorphs: 7 the low temperature (T ( 1440 K) monoclinic; intermediate temperature (1440 ( T ( 2640 K) tetragonal; and high temperature (T ( 2640 K) cubic. A metastable amorphous phase has also been widely reported [8][9][10][11][12] and studied for potential use in electronics as resistive random-access memory (RRAM) devices 13 and as a replacement for SiO 2 in complementary metal-oxide-silicon (CMOS) devices. 14,15 The radiation damage and potential amorphization of zirconia is of particular importance when considering the behaviour of zirconium alloys in corrosive, nuclear environmentssuch as those found in a typical light water reactor (LWR).…”

Section: Introductionmentioning

confidence: 99%