The crystal geometry of AlxGa1-xAs grown by MOCVD on offcut GaAs (100) substrates

Leiberich, A.; Levkoff, J.

doi:10.1016/0022-0248(90)90232-a

Cited by 30 publications

(7 citation statements)

References 8 publications

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“…Thus the rigid model I should be valid as supposed in principle also by some other authors for this [11,12] and other material systems [1][2][3][4][5][6][7][8][9][10]. On the other hand, for a number of specimens there resulted other, smaller as well as greater values of δD/ES.…”

Section: Discussion Of Some Examplessupporting

confidence: 57%

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Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

1993

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The effect of epitaxial misorientation on substrates having vicinal surfaces is studied using two simple geometrical models. The misorientations in two epitaxial systems, single layers and superlattices, can be partially explained by means of these models. Furthermore, the fundamentals of a new description tool for orientation relationships of epitaxial systems are outlined briefly, and two examples of application are given.

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Section: Discussion Of Some Examplessupporting

confidence: 57%

“…However, there is a lot of experimental evidence (see, e.g., [1][2][3][4][5][6][7][8][9][10][11][12][13][14]) that the epitaxial laws are an oversimplification not suitable for the detailed description of structural relations between substrate and deposit and, therefore, of their correlation with the growth process and physical properties.…”

Section: Introductionmentioning

confidence: 99%

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

1993

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“…The thickness of the GaP layer was 45 nm below the critical thickness. 27 From the x-ray RLMs around the asymmetrical ͕115͖ diffraction ͑not shown͒, the ͕110͖ planes normal to the ͑001͒ plane of the Si substrate were parallel to those of the GaP layers. 5͑a͒ and 5͑b͒ were measured in the x-ray incident directions of ͓110͔ ͑parallel to the misoriented direction͒ and ͓110͔ ͑perpendicular to the misoriented direction͒, respectively.…”

Section: Resultsmentioning

confidence: 99%

Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy

Takagi

Furukawa

Wakahara

et al. 2010

Journal of Applied Physics

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Ductile relaxation in cracked metal-organic chemical-vapor-deposition-grown AlGaN films on GaNA lattice relaxation process and a crystallographic tilt in GaP layers grown on misoriented Si͑001͒ substrates by metalorganic vapor phase epitaxy were investigated. Strained pseudomorphic GaP layers without defects on Si were successfully achieved by the optimization of growth conditions. Below critical thickness, the strained GaP layers were tilted in the misoriented direction of the Si substrates and triclinically distorted. Above critical thickness, the residual strain in the GaP layers was progressively relaxed with increased thickness of the GaP layers by forming 60°misfit dislocations propagating to the two orthogonal ͗110͘ directions at the heterointerface. X-ray diffuse scattering around the symmetrical GaP͑004͒ diffraction was observed after introducing misfit dislocations. Diffuse scattering became dominant with an increase in the density of the misfit dislocations and resulted in a broadening of the full width at half maximum of the x-ray rocking curves. The GaP layers that were relaxed with highly dense misfit dislocations were tilted opposite of the misoriented direction due to the imbalance nucleation of the misfit dislocations on each ͕111͖ glide plane.

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“…The VCSEL epi layers were grown at 720 °C temperature except for a 54 nm thick cap layer using 550 °C for contact. CBr 4 and Si 2 H 6 were used for p-type and n-type doping, respectively. CBr 4 was supplied at 4.47 µmol/min to the whole p-type DBR and Si 2 H 6 was supplied at 0.18 µmol/min to the high Al content layer and 0.04 µmol/min to the low Al content layers to obtain a 1 × 10 18 ~ 2 × 10 18 cm -3 carrier concentration.…”

Section: Methodsmentioning

confidence: 99%

“…Several studies on the surface morphology of AlGaAs have been presented. Some of the morphological studies were focused on the dependence of surface orientation of the substrate [1][2][3][4]. Some studies concerned the influence of impurities such as carbon [5][6][7][8], oxygen [9,10], or some species [11] generated during MOCVD growth.…”

Section: Introductionmentioning

confidence: 99%

The influence of aluminum composition of Al_xGa_1–xAs in distributed Bragg reflector on surface morphology

Kim

Yoon²,

Kim³

et al. 2004

Physica Status Solidi (b)

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Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of Al x Ga 1-x As on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1.

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The crystal geometry of AlxGa1-xAs grown by MOCVD on offcut GaAs (100) substrates

Cited by 30 publications

References 8 publications

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy

The influence of aluminum composition of Al_xGa_1–xAs in distributed Bragg reflector on surface morphology

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The crystal geometry of AlxGa1-xAs grown by MOCVD on offcut GaAs (100) substrates

Cited by 30 publications

References 8 publications

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy

The influence of aluminum composition of AlxGa1–xAs in distributed Bragg reflector on surface morphology

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The influence of aluminum composition of Al_xGa_1–xAs in distributed Bragg reflector on surface morphology