The crucial influence of thermal interface material in power electronic design

Abstract

Thermal interface material (TIM) is a key component in the majority of power electronic systems. Heat, generated by the semiconductors, has to be transferred to a heat sink and finally dissipated to ambient. The solutions available today focus on applications like computer processors, mobile applications and discrete electronic devices. Though similar local power densities need to be handled, power electronics for industrial inverter applications based on power modules have different needs. The present paper deals with these needs and describes the steps in developing a thermal interface material, especially d e d ic a te d f o r th e u se in p ow e r e le c tr o n ic s.

Validation of Thermal Stress Modeling in PV Inverters under Mission Profile Operation

“…On the other hand, the thermal impedance between the case and ambient Zca is strongly dependent on the design of the cooling system and also on the applied TIM [14]. Thus, their parameters are usually not provided by the manufacturer and need to be characterized, e.g., via experiments.…”

Energy Transport State Resolved Raman for Probing Interface Energy Transport and Hot Carrier Diffusion in Few-Layered MoS2

“…The bottleneck of most modern technologies and energy solutions has been attributed to the thermal problems at the nanoscale. , Especially, the thermal transport across interfaces can significantly influence the overall performance of nanosystems, such as microelectronics, photonics, and thermoelectric devices. The direct effect on device performance is that the high interface thermal resistance could cause electronic functionality catastrophic failures of nanodevices . So accurate thermal-physical characterization of the 2D interface is very important for both fundamental research and industrial applications.…”

“…The direct effect on device performance is that the high interface thermal resistance could cause electronic functionality catastrophic failures of nanodevices. 3 So accurate thermal-physical characterization of the 2D interface is very important for both fundamental research and industrial applications. However, the measurement of interface energy coupling is very challenging and complicated because interface thermal conductance is related to the characteristics of the interface properties, such as the effect of roughness, disorder, dislocations, bonding, and so on.…”

“…3 s) are the carrier diffusion coefficient, the electron−hole recombination time of MoS 2 and the incident photon flux of the laser source. α (cm −1 ) is the optical absorption coefficient of the MoS 2 nanosheets.…”