The coupling effect of slow-rate mechanical motion on the confined etching process in electrochemical mechanical micromachining

Han, Lianhuan; Jia, Yuchao; Cao, Yongzhi; Hu, Zhenjiang; Zhao, Xuesen; Guo, Shusen; Yan, Yongda; Zhang, Tian; Zhan, Dongping

doi:10.1007/s11426-017-9195-3

Cited by 11 publications

(10 citation statements)

References 39 publications

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“…However, the thermal stability of SLGBr is much better than them. All the results indicate the feasibility to fabricate the allin-SLG electronic elements or circuit boards by electrochemical nanoimprint lithography in future [36][37][38] .…”

Section: Please Do Not Adjust Marginsmentioning

confidence: 75%

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Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

et al. 2023

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Section: Please Do Not Adjust Marginsmentioning

confidence: 75%

“…All the results indicate the feasibility of fabricating all-in-SLG electronic elements or circuit boards by electrochemical nanoimprint lithography in the future. [36][37][38]…”

Section: Resultsmentioning

confidence: 99%

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

et al. 2023

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“…Copyright 2015 Royal Society of Chemistry. (d) The coupling effect of mechanical motion on the CELT process . (i) simulated concentration distribution of Br 2 with different feed velocities with a 55 μm working distance.…”

Section: Theoretical Research Of Celtmentioning

confidence: 99%

Confined Etchant Layer Technique: An Electrochemical Approach to Micro-/Nanomachining

Han

Shi

et al. 2023

J. Phys. Chem. C

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Historically electrochemistry plays an important role in the machinery processing industry, especially for hard-tomachine materials and profiled structures. Nowadays, the challenge remains for electrochemical machining to meet the requirements of micro-/nanomanufacturing because the feature size and machining accuracy are downsized to micro-/nanometer scale. Confined etchant layer technique (CELT), proposed by Prof. Zhao-Wu Tian in the early 1990s, is a forward-looking electrochemical micro-/ nanomachining for both the fabrications of three-dimensional micro-/nanostructures (3D-MNSs) and the polishing of supersmooth surfaces. Through a subsequent coupling chemical reaction between the electrogenerated etchant and the scavenger (i.e., EC reaction), the diffusion distance of the etchant is "confined" at micrometer or even nanometer scale and, thus, ensures the machining accuracy. The advantage of CELT lies in that it can work on the workpieces directly free of auxiliary processes, tool wear, residual stress, surface and subsurface damages, etc., and without considering the hardness, softness, and fragileness as well as the conductivity. This Review will present the systematic developments of CELT over the past 30 years, including theories, instruments, methodologies, and applications.

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“…For ECICE, machining accuracy is determined by the diffusion distance of the electrogenerated etchant, that is, the thickness of the diffusion layer. In order to improve the machining accuracy, much effort has been made to confine the diffusion layer by subsequently coupling reactions, − hydrodynamics, − and external physical fields. − Besides the fabrication of 3D-MNSs, ECICE is also useful for polishing super-smooth surfaces. − …”

Section: Introductionmentioning

confidence: 99%

Chemical Etching Processes at the Dynamic GaAs/Electrolyte Interface in the Electrochemical Direct-Writing Micromachining

Han

Wang

Sartin

et al. 2021

ACS Appl. Electron. Mater.

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Electrochemical fabrication of functional three-dimensional micro/nanostructures (3D-MNSs) at the wafer scale is important in the semiconductor industry, but it involves complex interfacial reactions. We demonstrated the use of scanning electrochemical microscopy (SECM), a competitive direct-writing micromachining technique, to achieve this by electrochemically induced chemical etching processes on semiconductor wafers. Besides the complex reaction kinetics, the machining accuracy is a function of various parameters, such as the SECM tip size, tip–substrate distance, etching time, the concentration of etchant precursors, and the coupling surface adsorption and passivation on the semiconductor wafer. Here, we investigated the influences of these factors on the machining profiles of etching pits and established a numerical model to predict and control the machining results. Based on the finite element analysis, the unexpected microbulges in the machining process are demonstrated to be caused by the insufficient mass transport and the precipitation of the etching product. The results are instructive for the controllable microfabrication of 3D-MNSs on the semiconductor wafers.

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The coupling effect of slow-rate mechanical motion on the confined etching process in electrochemical mechanical micromachining

Cited by 11 publications

References 39 publications

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

Confined Etchant Layer Technique: An Electrochemical Approach to Micro-/Nanomachining

Chemical Etching Processes at the Dynamic GaAs/Electrolyte Interface in the Electrochemical Direct-Writing Micromachining

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