Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

Zeng, Lanping; Wei, Song; Jin, Xiangfeng; He, Quanfeng; Han, Lianhuan; Wu, Yuan‐Fei; Lagrost, Corinne; Leroux, Yann R.; Hapiot, Phillipe; Cao, Yang; Cheng, Jun; Zhan, Dongping

doi:10.1039/d2sc06800a

Cited by 3 publications

(1 citation statement)

References 39 publications

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“…We have proposed a strategy to open the band gap of single-layer graphene (SLG) by forming highly stable brominated SLG through the brominating addition reaction, which involved bromine radicals generated by electrochemical oxidation from bromide anions. 38 …”

Section: Introductionmentioning

confidence: 99%

Regulation of heterogeneous electron transfer reactivity by defect engineering through electrochemically induced brominating addition

Zeng,

Han,

Nan

et al. 2024

Chem. Sci.

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Section: Introductionmentioning

confidence: 99%

Regulation of heterogeneous electron transfer reactivity by defect engineering through electrochemically induced brominating addition

Zeng,

Han,

Nan

et al. 2024

Chem. Sci.

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Graphene‐Based Lateral Heterojunctions for 2D Integrated Circuits

Haidari,

Jang,

Yoon

et al. 2024

Adv Elect Materials

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A method for patterning single‐layer graphene (SLG) and single‐layer oxidized graphene (SOG) within a continuous atomic layer to form lateral heterojunctions is presented. Raman spectroscopy is employed to investigate the evolution of defect‐related Raman peaks during excimer‐UV irradiation, facilitating the identification of structural changes and defect formation processes. Electrical transport measurements reveal that SOG‐patterned field‐effect transistors (FETs) exhibit varying characteristics depending on the degree of oxidation, thus offering the potential to tailor the electrical properties of graphene devices for specific requirements. Scanning Kelvin probe microscopy measurements reveal the surface potential and work function of the SOG regions compared with those of SLG. The effective functionality of the SOG pattern to operate as a resistor, allowing control of the electrical conductivity in the SOG‐patterned SLG channels, is demonstrated. This capability restricts the current flow while preserving the pristine electrical properties of the graphene channel. Moreover, the SOG pattern can serve as a potential barrier to constructing SLG‐SOG‐patterned integrated circuits, providing exciting opportunities for engineering advanced electronic components. This breakthrough in graphene devices simplifies the fabrication process of graphene‐based FETs and provides the foundation for developing atomically thin integrated circuits for a wide range of applications.

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DFT study of adsorption properties of the ammonia on both pristine and Si-doped graphene nanoflakes

Bardan,

Ajeel,

Mohammed

et al. 2024

Chemical Physics Impact

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Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

Abstract: As a semimetal with zero band gap and single-atom-scale thickness, single layer graphene (SLG) has an excellent electron conductivity on its basal plane. If the band gap could be opened...

Cited by 3 publications

References 39 publications

Regulation of heterogeneous electron transfer reactivity by defect engineering through electrochemically induced brominating addition

Regulation of heterogeneous electron transfer reactivity by defect engineering through electrochemically induced brominating addition

Graphene‐Based Lateral Heterojunctions for 2D Integrated Circuits

DFT study of adsorption properties of the ammonia on both pristine and Si-doped graphene nanoflakes

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