The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide

Mönch, Winfried

doi:10.1007/978-3-642-18870-1_13

Cited by 3 publications

(1 citation statement)

References 73 publications

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“…This is consistent with the Schottky barrier heights reported for Ni/ SiC Schottky diodes. 18 The uncompensated shallow donor concentrations N d -N a deduced from the 1/C 2 ͑V͒ plots are presented in Table I ͑N d is the concentration of shallow donors, N a the concentration of all compensating acceptors͒. It can be seen that, despite the presence of intentional nitrogen doping, the concentration decreases sig- nificantly from seed to tail.…”

Section: A I -V and C -V Measurementsmentioning

confidence: 98%

Minority carrier diffusion length measurements in 6H–SiC

Polyakov

Huh

et al. 2005

Journal of Applied Physics

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Minority carrier diffusion lengths were measured as a function of temperature and position along the growth axis of lightly nitrogen doped boules of 6H–SiC grown by the physical vapor transport technique. It is shown that the diffusion lengths increase from 1to2microns in the seed portion of the boule to about 4microns in the tail portion of the boules. Deep levels transient spectroscopy measurements revealed the presence of deep electron traps with the activation energies of 0.35eV, 0.5eV, 0.65eV, and 1eV. The densities of all these traps decrease when moving from seed to tail of the boules. A good correlation between the change of the lifetime values and the density of the 0.65eV and 1eV electron traps was observed. The measured lifetimes show an increase with temperature following a power law that suggests that the hole capture could be determined by cascade capture process.

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Section: A I -V and C -V Measurementsmentioning

confidence: 98%

Minority carrier diffusion length measurements in 6H–SiC

Polyakov

Huh

et al. 2005

Journal of Applied Physics

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Device Processing of Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Material science and device physics in SiC technology for high-voltage power devices

Kimoto

2015

Jpn. J. Appl. Phys.

877

469

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Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600–1700 V) SiC Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

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The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide

Cited by 3 publications

References 73 publications

Minority carrier diffusion length measurements in 6H–SiC

Minority carrier diffusion length measurements in 6H–SiC

Device Processing of Silicon Carbide

Material science and device physics in SiC technology for high-voltage power devices

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