The continuous rhombohedral-gubic transformation in GeTe-SnTe alloys

Bierly, J.N.; Muldawer, L.; Beckman, O.

doi:10.1016/0001-6160(63)90170-6

Cited by 147 publications

(32 citation statements)

References 6 publications

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“…Interestingly, its ionicity lies between GeTe and SnTe in this plot. GeTe and SnTe form a solid solution, with SnTe becoming cubic above ∼16 K and GeTe becoming cubic above 720 K. 22,24,[54][55][56] In essence, the cubic-rhombohedral ionicity boundary shifts leftward with increasing temperature, to the point where GeTe and SnTe are both cubic. The position of SbAs in the St. John-Bloch plot implies that it also should undergo a similar transition to a cubic state at high temperatures.…”

Section: B Crystal Chemistry and High-temperature Transformationmentioning

confidence: 99%

Chemical ordering rather than random alloying in SbAs

Shoemaker

Chasapis

et al. 2013

Phys. Rev. B

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The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here we show via single-crystal and synchrotron x-ray diffraction that SbAs is a compound and the A7 structure can display chemical ordering of Sb and As, which were previously thought to mix randomly. Formation of this compound arises due to differences in electronegativity that are common to IV-VI compounds of average group V such as GeTe, SnS, PbS, and PbTe, and also ordered intra-period compounds such as CuAu and NiPt. High-temperature diffraction studies reveal an order-disorder transition around 550 K in SbAs, which is in stark contrast to IV-VI compounds GeTe and SnTe that become cubic at elevated temperatures but do not disorder. Transport and infrared reflectivity measurements, along with first-principles calculations, confirm that SbAs is a semimetal, albeit with a direct band separation larger than that of Sb or As. Because even subtle substitutions in the semimetals, notably Bi1−xSbx, can open semiconducting energy gaps, a further investigation of the interplay between chemical ordering and electronic structure on the A7 lattice is warranted.

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Section: B Crystal Chemistry and High-temperature Transformationmentioning

confidence: 99%

Chemical ordering rather than random alloying in SbAs

Shoemaker

Chasapis

et al. 2013

Phys. Rev. B

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“…are discontinuous at a second-order phase transition point [7]. Continuous variations in the lattice parameters, underlining the second-order character of the phase transition, were observed for Pb 1Àx Ge x Te [6,8], Sn 1Àx Ge x Te [9] and (GeTe) 1Àx [(Ag 2 Te) y (Bi 2 Te 3 ) 1Ày ] x [10,11] by means of high temperature X-ray diffraction (XRD) measurements. For the latter alloys, the experimental evidence for a second-order phase transition was also supported theoretically, by applying the Landau-Lifshitz type of symmetry criterion [10,11].…”

Section: Introductionmentioning

confidence: 99%

Phase transitions of p-type (Pb,Sn,Ge)Te-based alloys for thermoelectric applications

Gelbstein¹,

Ben-Yehuda²,

Dashevsky³

et al. 2009

Journal of Crystal Growth

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“…The radial segregation is also expected to take place. Besides, it should be taken into account that at a room temperature the cubic phase is stable only for x < 0.23 [12]. The crystals of Sn 1−x Ge x Te with x > 0.30 undergo diffusionless cubic-trigonal phase transformation with the formation of a domain (twin) structure, therefore in this region of compositions the bulk single crystals cannot be obtained.…”

Section: Resultsmentioning

confidence: 99%