Chemical ordering rather than random alloying in SbAs

Shoemaker, Daniel P.; Chasapis, Thomas C.; Do, Dat; Francisco, Melanie; Chung, Duck Young; Mahanti, S. D.; Llobet, Anna; Kanatzidis, Mercouri G.

doi:10.1103/physrevb.87.094201

Cited by 16 publications

(21 citation statements)

References 75 publications

(77 reference statements)

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“…32 Recently, chemically ordered alloying composed of Sb and As was also synthesized; it shares the same crystallographic structure as bulk gray arsenic (R3m, see Figure 1 of ref 32.). We thus also studied the structural characteristics using the monolayer arsenic model, but replacing half the As in the same plane with Sb (see Figure 1b).…”

Section: ■ Results and Discussionmentioning

confidence: 98%

Structural and Electronic Properties of Layered Arsenic and Antimony Arsenide

et al. 2015

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Layered materials exhibit intriguing electronic characteristics and the search for new types of two-dimensional (2D) structures is of importance for future device fabrication. Using state-of-art first principle calculations, we identify and characterize the structural and electronic properties of two 2D layered arsenic materials, namely, arsenic and its alloy AsSb. The stable 2D structural configuration of arsenic is confirmed to be the low-buckled two-dimensional hexagonal structure by phonon and binding energy calculations. The monolayer exhibits indirect semiconducting properties with gap around 1.5 eV (corrected to 2.2 eV by hybrid function), which can be modulated into a direct semiconductor within a small amount of tensile strain. These semiconducting properties are preserved when cutting into 1D nanoribbons, but the band gap is edge dependent. It is interesting to find that an indirect to direct gap transition can be achieved under strain modulation of the armchair ribbon. Essentially the same phenomena can be found in layered AsSb, except a weak Rashba induced band splitting is present in AsSb due to the nonsymmetric structure and spin orbit coupling. When an additional layer is added on the top, a semiconductor−metal transition will occur. The findings here broaden the family of 2D materials beyond graphene and transition metal dichalcogenides and provide useful information for experimental fabrication of new layered materials with possible application in optoelectronics. ■ INTRODUCTIONOwing to their remarkable properties, 1,2 in recent years graphene-like 2D materials have attracted much research attention as emerging materials for nanoelectronics. As exemplified by recently synthesized graphene, 3,4 silicene, 5−7 boron-nitride nanosheets, 8−10 transition-metal dichalcogenides (TMDs), 11 and black phosphorus, 12,13 these materials are theoretically predicted and experimentally confirmed to possess novel properties which are different from or even better than those of their bulk counterparts. These 2D layered materials can exhibit versatile electronic properties, including metallic, semiconducting, superconducting, and even topological insulator 14 properties with extremely high mobility. With many promising applications in nanoelectronics and optoelectronics such as field-effect transistors (FETs), optoelectronics devices, photovoltaic solar cells, valley electronics, and spintronics applications, 11,15,16 they are considered to represent a relatively new and exciting area for nanotechnology. In this context, both the fundamental scientific importance and the promise of practical applications makes the exploration of new layered materials with novel properties a vigorous field of research in condensed matter physics and materials research.The 2D layered materials with single elemental constitution that have currently been synthesized/fabricated are mainly located in the right part of periodic table, namely, groups IV and V. For example, the commonly studied graphene, 3 silicene, germanium, 17 and tin fi...

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Section: ■ Results and Discussionmentioning

confidence: 98%

Structural and Electronic Properties of Layered Arsenic and Antimony Arsenide

et al. 2015

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“…By melt growth method, cleavable layered materials such as GeP and SiAs bulk crystals have been successfully synthesized in 2016 . In the case of V‐V binary materials, SbAs single crystals with 1 mm per side have been prepared in 2013 . Single crystals of bulk Bi 1− x Sb x have also been grown by Bridgeman method and zone melting method with tunable concentration of Sb, where the materials are either completely or partially molten in the crucible.…”

Section: Realizing 2d V‐v Binary Materialsmentioning

confidence: 99%

2D V‐V Binary Materials: Status and Challenges

et al. 2019

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201902352. 2D phosphorene, arsenene, antimonene, and bismuthene, as a fast-growing family of 2D monoelemental materials, have attracted enormous interest in the scientific community owing to their intriguing structures and extraordinary electronic properties. Tuning the monoelemental crystals into bielemental ones between group-VA elements is able to preserve their advantages of unique structures, modulate their properties, and further expand their multifunctional applications. Herein, a review of the historical work is provided for both theoretical predictions and experimental advances of 2D V-V binary materials. Their various intriguing electronic properties are discussed, including band structure, carrier mobility, Rashba effect, and topological state. An emphasis is also given to their progress in fabricated approaches and potential applications. Finally, a detailed presentation on the opportunities and challenges in the future development of 2D V-V binary materials is given.

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“…The bulk alloy of Bi 1-x Sb x can be semimetallic or semiconducting depending on the composition x. 325 Monolayers of group-VA compounds exhibit also different properties from their parent constituent monolayers. Zhu et al investigated the stability of both sw-and hb-As 1-x P x compounds and showed that they can undergo a structural transition accompanied by direct-indirect bandgap change depending on the compositions x.…”

Section: Compounds and Alloysmentioning

confidence: 99%

Two-dimensional pnictogens: A review of recent progresses and future research directions

Ersan

Kecik

Özçelik

et al. 2019

Applied Physics Reviews

150

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Soon after the synthesis of two-dimensional (2D) ultrathin black phosphorus and fabrication of field effect transistors thereof, theoretical studies have predicted that other group-VA elements (or pnictogens), N, As, Sb, and Bi can also form stable, single-layer (SL) structures. These were nitrogene in a buckled honeycomb structure, arsenene, antimonene, and bismuthene in a buckled honeycomb, as well as washboard and square-octagon structures with unusual mechanical, electronic, and optical properties. Subsequently, theoretical studies are followed by experimental efforts that aim at synthesizing these novel 2D materials. Currently, research on 2D pnictogens has been a rapidly growing field revealing exciting properties, which offers diverse applications in flexible electronics, spintronics, thermoelectrics, and sensors. This review presents an evaluation of the previous experimental and theoretical studies until 2019, in order to provide input for further research attempts in this field. To this end, we first reviewed 2D, SL structures of group-VA elements predicted by theoretical studies with an emphasis placed on their dynamical and thermal stabilities, which are crucial for their use in a device. The mechanical, electronic, magnetic, and optical properties of the stable structures and their nanoribbons are analyzed by examining the effect of external factors, such as strain, electric field, and substrates. The effect of vacancy defects and functionalization by chemical doping through adatom adsorption on the fundamental properties of pnictogens has been a critical subject. Interlayer interactions in bilayer and multilayer structures, their stability, and tuning their physical properties by vertical stacking geometries are also discussed. Finally, our review is concluded by highlighting new research directions and future perspectives on the challenges in this emerging field.

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Chemical ordering rather than random alloying in SbAs

Cited by 16 publications

References 75 publications

Structural and Electronic Properties of Layered Arsenic and Antimony Arsenide

Structural and Electronic Properties of Layered Arsenic and Antimony Arsenide

2D V‐V Binary Materials: Status and Challenges

Two-dimensional pnictogens: A review of recent progresses and future research directions

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