The construction and evaluation of behavioral models for microwave devices based on time-domain large-signal measurements

Abstract

We present a new procedure for creating non-linear behavioral models of microwave devices, based on techniques developed in Time-Series Analysis. We illustrate this procedure by creating a model for a HEMT device. Large-signal time-domain microwave measurements are used to generate the time-series data of the terminal currents and voltages. The dynamical model of the HEMT is defined by fitting multivariate polynomials to the terminal voltages and their higher-order derivatives. The model accurately predicts DC, small-signal, and large-signal behavior.

Extraction of a Multi-Dimensional Polynomial Device Model for an Improved Distortion Contribution Analysis Technique

“…In fact, the data range for fitting can be fully covered by including only one fundamental tone in the first control input (here, ) and another fundamental tone in the second control input [13], [18], [19]. As a result, the data range becomes a square when the correlation is almost completely removed.…”

“…Here the choice of proper test signals for the characterization step is very important. The presented approach is similar to the one used for extracting behavioral models for power amplifiers (PAs) in [13], but we extend it to make a good coverage over the exact nonlinear operating regime where the transistor operates.…”

Enhanced on-wafer time-domain waveform measurement through removal of interconnect dispersion and measurement instrument jitter

“…The LSNA is not a new development, but has previously been seen as a nonlinear network analyzer for device or behavioral circuit modeling [1]- [3]. Although yielding time-domain data, the instrument internally resembles a VNA or microwave transition analyzer (MTA) that would use a sinewave stimulus.…”

Artificial neural network model for hemts constructed from large-signal time-domain measurements

“…In this modelling method, an electrical two-port can be described by the general equations of the form [9] with I,@) and I,(r) the terminal currents, and VI@) and V2(Q the terminal voltages. For the considered class of devices, microwave transistors, the terminal currents are mostly functions of the terminal voltages and their higher order derivatives only.…”

“…Due to recent advances in the metrology of Recently, we proposed a procedure to construct a time-domuin behavioural model [9], where we built upon techniques developed in nonlinear time-series analysis (NLTSA) [lo].…”