The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111) BiFeO3 thin film

Chen, Zhihui; He, Long; Zhang, Fan; Jiang, Jun; Meng, Jianwei; Zhao, Boyuan; Jiang, Anquan

doi:10.1063/1.4804144

Cited by 40 publications

(25 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 4c, d show the ln (J) versus E 1/2 and ln (J/ E) versus E 1/2 characteristics of pure BFO and BPS x FMO thin films according to Schottky emission and PooleFrenkel emission, respectively. It is obvious that the extracted optical dielectric permittivity of K value is below 1.3, unreasonable less than 6.25 calculated from the refraction index for the BFO [23,24]. Consequently, both Schottky and PF emissions should be ruled out here in pure BFO and BPSxFMO thin films.…”

Section: Resultsmentioning

confidence: 89%

Conduction mechanisms and enhanced multiferroic properties of Sr doped Bi0.85−xPr0.15SrxFe0.97Mn0.03O3 thin films

Yan

Tan

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Pure BiFeO 3 (BFO) and Bi 0.85-x Pr 0.15 Sr x Fe 0.97 Mn 0.03 O 3 (BPS x FMO, x = 0.02-0.05) thin films were deposited on fluorine-doped SnO 2 (FTO/glass) substrates by a sol-gel method. The systematic studies of crystalline structure, surface morphologies, leakage conduction mechanisms, ferroelectric and magnetic properties of pure BiFeO 3 and Bi 0.85-x Pr 0.15 Sr x Fe 0.97 Mn 0.03 O 3 thin films were investigated. X-ray diffraction patterns, Rietveld analysis and Raman scattering spectra reveal that the (Pr, Sr and Mn) co-doped BiFeO 3 thin films give rise to a trigonal (R3m: R) structure transition with respect to the original rhombohedral structure of pure BiFeO 3 film. Fowler-Nordheim tunneling conduction mechanism dominates the leakage current of all the films in the relatively high electric field. The significantly enhanced ferroelectric properties of the Bi 0.85-x Pr 0.15 Sr x Fe 0.97 Mn 0.03 O 3 thin films were observed in comparison with pure BiFeO 3 film. In addition, the BPS 2 FMO film shows the enhanced ferromagnetism with the saturation magnetization (M s * 1.97 emu cm -3 ), which is almost three times larger than that of pure BFO film (M s * 0.67 emu cm -3 ), as a result of the small grain size effect and the collapse of space modulated spin structure by the structure transition.

show abstract

Section: Resultsmentioning

confidence: 89%

Conduction mechanisms and enhanced multiferroic properties of Sr doped Bi0.85−xPr0.15SrxFe0.97Mn0.03O3 thin films

Yan

Tan

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…According to Schottky emission arising from a difference in Fermi level between a metal and a semiconductor, charges have to overcome the potential barrier created by the energy difference between the metal and semiconductor [4,20,21]. The current density (Js) can be expressed as…”

Section: Advances In Engineering Research Volume 110mentioning

confidence: 99%

“…Among high-κ materials, HfO 2 is one of the most promising candidates due to high-κ (about [20][21][22][23][24][25]) and large band gap (5.7 eV) [8][9][10]. However, a relatively high quadratic voltage coefficients of capacitance (α) remains as a serious dilemma for the application of the HfO 2 MIM capacitors, where the α is known to be inversely proportional to dielectric thickness and dielectric constant [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Single Sio2 Layer Incorporation on Electrical Performances of Metal-insulator-metal Capacitors with Al2O3-Hfo2-Al2O3 Dielectrics

Zhang¹,

Xu²

2017

Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017)

View full text Add to dashboard Cite

Keywords: MIM (metal-insulator-metal), VCC (voltage coefficients of capacitance), ALD (atomic layer deposition).Abstract. The metal-insulator-metal (MIM) capacitors with Al 2 O 3 /HfO 2 /Al 2 O 3 (AHA) and Al 2 O 3 /HfO 2 /SiO 2 /HfO 2 /Al 2 O 3 (AHSHA) dielectric structure using atomic layer deposition (ALD) technique have been fabricated. It is demonstrated that the dielectric loss at higher applied frequency and quadratic VCC in high-κ MIM capacitors can be decreased by means of introducing an ultrathin layer of ALD SiO 2 , which has an opposite sign of quadratic VCC against the HfO 2 layers. A high capacitance density of 8.1 fF/μm 2 and the low leakage current density of 2.5 10-7A/cm 2 at 1 MV/cm can be achieved with the dielectric structure as AHSHA. In addition, the breakdown electrical field in AHSHA dielectric is obviously improved. Furthermore, with the survey of different leakage models, the Schottky emission has been considered as the dominating conduction mechanism for both of the AHA and AHSHA capacitors.

show abstract

“…2,8 Several models have been proposed to the date to account for the I-V characteristics of these devices, mainly space charge limited conduction, Poole-Frenkel, Fowler-Nordheim, and Schottky-like conduction, but no consensus on which is the dominant mechanism has been reached yet. 10 In this letter, a compact representation for the minor and major I-V loops in Pt/BFO/SRO structures based on a Schottky diode-like conduction model in combination with sigmoidally varying parameters is explored. It is shown that the Schottky barrier height (SBH) modulation cannot explain by itself the large hysteretic loops and the remarkable asymmetry of the average coercive voltages.…”

mentioning

confidence: 99%

Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches

Miranda

Jiménez

Tsurumaki‐Fukuchi

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO3 polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0.07 eV) than previously reported (>0.5 eV). It is also shown that the p-type semiconducting nature of BiFeO3 can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4.7 V and −1.9 V) exhibited by our devices.

show abstract

The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111) BiFeO3 thin film

Cited by 40 publications

References 38 publications

Conduction mechanisms and enhanced multiferroic properties of Sr doped Bi0.85−xPr0.15SrxFe0.97Mn0.03O3 thin films

Conduction mechanisms and enhanced multiferroic properties of Sr doped Bi0.85−xPr0.15SrxFe0.97Mn0.03O3 thin films

Effect of Single Sio2 Layer Incorporation on Electrical Performances of Metal-insulator-metal Capacitors with Al2O3-Hfo2-Al2O3 Dielectrics

Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches

Contact Info

Product

Resources

About