Abstract:Keywords: MIM (metal-insulator-metal), VCC (voltage coefficients of capacitance), ALD (atomic layer deposition).Abstract. The metal-insulator-metal (MIM) capacitors with Al 2 O 3 /HfO 2 /Al 2 O 3 (AHA) and Al 2 O 3 /HfO 2 /SiO 2 /HfO 2 /Al 2 O 3 (AHSHA) dielectric structure using atomic layer deposition (ALD) technique have been fabricated. It is demonstrated that the dielectric loss at higher applied frequency and quadratic VCC in high-κ MIM capacitors can be decreased by means of introducing an ultrathin lay… Show more
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