The composition of the CH4 plasma

Drabner, G.; Poppe, A.; Budzikiewicz, H.

doi:10.1016/0168-1176(90)85037-3

Cited by 21 publications

(7 citation statements)

References 118 publications

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“…In the present study, a plasma-assisted HFCVD method is applied to grow B/N co-doped singlewalled carbon nanotubes, so the possibility of selective etching of a gas-phase plasma hydrocarbonation reaction [7,19,20] on metallic nanotubes has to be considered. Systematic plasma-assisted HFCVD experiments were carried out to synthesize C-SWNTs by using H 2 and CH 4 as reactant gases (C-SWNT I) and also by using CH 4 and B 2 H 6 as reactant gases (C-SWNT II), respectively.…”

mentioning

confidence: 99%

Converting Metallic Single‐Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co‐Doping

Wang

et al. 2008

Advanced Materials

108

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Electronic transport measurements on boron/nitrogen co‐doped single‐walled carbon nanotubes (BCN‐SWNTs) have been performed to determine their metallic or semiconducting character. The results obtained from a large number of BCN‐SWNT‐based field‐effect transistors indicate that the as‐grown BCN‐SWNTs are purely semiconducting, while the undoped C‐SWNTs consist of only about 70% semiconducting nanotubes.

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confidence: 99%

Converting Metallic Single‐Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co‐Doping

Wang

et al. 2008

Advanced Materials

108

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“…43 the ion-induced dipole attraction between CH 3 ϩ and H 2 is eliminated, resulting in rapid dissociation into CH 2 ϩHϩH 2 . 44,45 This structure of CH 3 ϩ -H 2 has also been invoked to explain the results of experiments that employed isotopic substitutions to investigate the collisional destruction of CH 5 ϩ . 46 Recent theoretical studies by Schreiner and co-workers 41 and others 24,[40][41][42] have shown that, while indeed the CH 3 ϩ -H 2 configuration with C S (I) symmetry yields the global minimum for the total energy of the system, two other geometries of C S (II) and C 2v (I) symmetry have almost identical energies.…”

Section: A Methane Targetmentioning

confidence: 96%

Collision induced dissociation, proton abstraction, and charge transfer for low energy collisions involving CH4+

Peko

Dyakov

Champion

1998

The Journal of Chemical Physics

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Integral and differential cross section measurements at low collision energies for the N 2 + + CH 4 / CD 4 reactions Measurements of total cross sections for collision induced dissociation, proton abstraction, and charge transfer have been made for collisions of CH 4 ϩ with CD 4 , H 2 , and Ar. The laboratory collision energies range from a few up to 400 eV, and isotopic substitutions have been made where possible to investigate any possible isotope effects, and for some reactants, to more closely identify the product ions. Cross sections for all reaction channels are observed to be small; Շ5 Å 2 for the methane target, Շ0.5 Å 2 for the hydrogen target, and Շ2 Å 2 for the argon target. For the methane and hydrogen targets, proton abstraction is observed at low energies while charge transfer occurs for energies տ10 eV. The implications of internal energy present in the CH 4 ϩ projectile for the cross section measurements is discussed. In addition, decomposition of CD 4 H ϩ is addressed in terms of recent calculations related to the structure of the CH 5 ϩ ion.

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“…In the system of n-type diamond growth, the main recombination reactions are as following 6 (1) Some photons produced during recombination may collide with some neutral particles; when the energy of photons is bigger than that of the neutral particles ionization, photoionization will take place, and neutral particle absorbs a photon and emits an electron. The reaction is as followings:…”

Section: Theoretical Modelmentioning

confidence: 99%

Characteristic of vapor dynamic process for sulfur-doped n-type diamond films

et al. 2005

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Monte Carlo simulations are adopted to study the space distribution of the particles in the mixture of CH 4 /H 2 /H 2 S/Ar considering the avalanche collision and dissociative ionization of electrons based on the theory of glow discharge in electron-assisted chemical vapor deposition (EACVD) system. The relationship between the space distribution and the recombination rate of H and CH 3 , CH 3 + fragment particles is given. The dynamic process of the n-type doped diamond film is simulated under different gas pressure. The particle distributions of S, S + and Ar + are also obtained. The result is very important for investigation of n-type diamond film doping at low temperature.

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The composition of the CH4 plasma

Cited by 21 publications

References 118 publications

Converting Metallic Single‐Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co‐Doping

Converting Metallic Single‐Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co‐Doping

Collision induced dissociation, proton abstraction, and charge transfer for low energy collisions involving CH4+

Characteristic of vapor dynamic process for sulfur-doped n-type diamond films

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