The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping

Chen, Ao; Fu, Yuyang; Ma, Guokun; Yang, Gaoqi; Liu, Nengfan; Zhao, Xiaohui; Zhang, Ziqi; Li, Tao; Wan, Houzhao; Rao, Yiheng; Duan, Jinxia; Shen, Lu; Zhang, Jun; Sun, Peng; Yang, Dedong; Chang, Ting‐Chang; Wang, Hao

doi:10.1109/led.2022.3165789

Cited by 11 publications

(2 citation statements)

References 21 publications

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“…Meanwhile, VO 2 , one of the main MIT materials with a transition temperature of only 341 K possesses poor thermal stability. The other main material, NbO 2 , has multiple oxidation states [112] limiting the NbO 2 -based MIT selector.…”

Section: Mit Selectorsmentioning

confidence: 99%

Volatile threshold switching memristor: An emerging enabler in the AIoT era

Zuo¹,

Fu²,

Zhang³

et al. 2023

J. Semicond.

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With rapid advancement and deep integration of artificial intelligence and the internet-of-things, artificial intelligence of things has emerged as a promising technology changing people’s daily life. Massive growth of data generated from the devices challenges the AIoT systems from information collection, storage, processing and communication. In the review, we introduce volatile threshold switching memristors, which can be roughly classified into three types: metallic conductive filament-based TS devices, amorphous chalcogenide-based ovonic threshold switching devices, and metal-insulator transition based TS devices. They play important roles in high-density storage, energy efficient computing and hardware security for AIoT systems. Firstly, a brief introduction is exhibited to describe the categories (materials and characteristics) of volatile TS devices. And then, switching mechanisms of the three types of TS devices are discussed and systematically summarized. After that, attention is focused on the applications in 3D cross-point memory technology with high storage-density, efficient neuromorphic computing, hardware security (true random number generators and physical unclonable functions), and others (steep subthreshold slope transistor, logic devices, etc.). Finally, the major challenges and future outlook of volatile threshold switching memristors are presented.

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Section: Mit Selectorsmentioning

confidence: 99%

Volatile threshold switching memristor: An emerging enabler in the AIoT era

Zuo¹,

Fu²,

Zhang³

et al. 2023

J. Semicond.

Self Cite

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“…Recently, it has been proven that volatile TS devices can simulate Hodgkin-Huxley and leaky integrate-and-fire neurons [14][15][16]. To simulate neurons, volatile TS devices with mechanisms of electrochemical metallization (ECM), metal-insulator transition (MIT), or the chalcogenide phase change materials (PCMs) are explored [17][18][19][20][21]. MIT-or PCMs-based volatile TS devices are based on the transformation between the high-resistance phase and the low-resistance phase of the dielectric layer of the devices [22].…”

Section: Introductionmentioning

confidence: 99%

The Effects of Ag Nanoislands on the Volatile Threshold-Switching Behaviors of Au/Ag/HfO2/Ag Nanoislands/Au Devices

Long

Zhang

et al. 2023

Journal of Nanomaterials

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Volatile threshold-switching (TS) devices have been used as selectors and to simulate neurons in neural networks. It is necessary to find new ways to improve their performance. The randomness of conductive filament (CF) growth and the endurance of the devices are urgent issues at present. Here, we explored embedded Ag nanoislands (NIs) in HfO2-based TS devices to limit the position of the CF and facilitate its growth at the same time. The Au/Ag(2 nm)/HfO2(4 nm)/Ag NIs/Au volatile TS devices exhibited forming-free characteristics with improved endurance compared with the devices without Ag NIs, which was ascribed to the enhanced localization of the electrical field and increased oxygen vacancies in HfO2 induced by the Ag NIs. A mechanism was proposed to explain the volatile TS behaviors of the devices. The Ag NIs and the thickness of the HfO2 layers played key roles in whether the devices required forming. This work shows that the use of metal NIs is an effective and convenient way to improve the performance of TS devices.

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